EL SEGUNDO, CA. July 2001 - International Rectifier, IR®, (NYSE: IRF), has expanded its family of SOIC-packaged HEXFET® power MOSFETs. The new MOSFETs are made with small die and offer 150V and 200V breakdown voltage in SO-8 and TSOP-6 packages at very low currents (less than 2A). The small die makes these components very cost-effective, yet the new devices perform effectively against larger, more powerful devices.

The new MOSFETs are power management solutions for low- to medium-power isolated, board-mounted DC-DC converters. The expanded device range includes the industry's first 150V MOSFET in the TSOP-6 package.

As the demand for network infrastructure products increases at a rapid pace, a variety of DC-DC converter module sizes are necessary for different system power requirements. IR's expanded 150V and 200V SOIC product family now includes primary devices for smaller standard packages delivering 20W and below, as well as for higher power half- and quarter- "brick" modules up to 100W.

IR's new SOIC power MOSFETs are specifically made for backplane power module systems found in distributed power architecture (DPA) circuits used in telecommunication and data communication system power supplies. In DPA systems, high-current, low-voltage (3.3V and less) power modules are mounted directly on the systems board. The power supplies for the low-power biasing circuits are commonly located on a backplane to save motherboard space. The biasing circuits supply power to op-amps, radio frequency amplifiers and other circuits.

Backplane power supplies typically have 48V input converters in the sub-20W power range with outputs such as 5V, 12V, -5V and/or -12V. The design challenge is to find components optimized and priced for low power applications.

The new SOICs feature low RDS(on) to reduce conduction losses, low gate charge and low Miller charge to reduce switching losses and allow operation at very high switching frequencies.

The IRF5802 features ultra-low gate charge, and is an excellent choice for modules delivering five to ten watts output. The IRF7465 has lower RDS(on) and lower gate charge, and is designed for ten to 20 watt modules, while the IRF7451 with ultra-low RDS(on) provides optimal performance for modules in the 25 watt class. For modules requiring 200VN MOSFETs, IRF5801 (TSOP-6) and IRF7464 (SO-8) provide similar benefits for the 10W to 20W power range.

According to Jorge Llorens, International Rectifier Marketing Manager, DC-DC Sector, Network and Communication Products, "IR's silicon know-how enables the new SOIC HEXFET power MOSFETs to deliver the best cost-to-performance value in telecom and datacom applications. In addition, the new devices improve power density and simplify DC-DC converter design."

Availability and Pricing

Samples and production volumes are available immediately. Pricing for the new family members begins at US $0.14 each in 10,000-unit quantities. Data sheets are posted on the International Rectifier Web site, www.irf.com.

Part Number	BVDSS(V)	RDS(on) max @10V (W)	ID @ 25°C(A)	QG typ @10VGS(nC)	QGD typ(nC)	Package	Typical Application
IRF5801	200	2.2	0.6	3.9	2.2	TSOP-6	Very low power <5-10W
IRF5802	150	1.2	0.9	4.5	2.4	TSOP-6	Very low power <5-10W
IRF7464	200	0.73	1.2	9.5	4.6	SO-8	Low power <10-20W
IRF7465	150	0.28	1.9	10	5.0	SO-8	Low power <10-20W

About International Rectifier International Rectifier is recognized as the leading supplier of power semiconductors and systems solutions. IR's patented HEXFET® power MOSFETs, IGBTs and high-voltage ICs make electricity work smarter in industrial automation and controls, automotive electrical systems, consumer electronics, computers and peripherals, telecommunications, lighting and satellite/launch vehicle applications. Trademark Notice IR® and HEXFET® are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.

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