EL SEGUNDO, CA. February 2001 - International Rectifier (NYSE: IRF) announces the world's first 1000V radiation-hardened (rad-hard) power MOSFET. The IRHY7G30CMSE RAD-Hard™ power MOSFET improves power management circuits and high-frequency switching systems in satellite communications systems by minimizing component count. Typical applications include traveling wave tube amplifiers (TWTA). TWTAs are used to amplify microwave signals in satellite communications systems.

According to Richard Southwell, International Rectifier HiRel Components Group Marketing Manager, "IR's new 1000-volt device is a major breakthrough, since the highest voltage-rated rad-hard MOSFET previously available is a 600-volt device. Now designers can accommodate safe de-rating conditions and still not lose functionality and practicality in their designs. In high-voltage applications, the 1000-volt device can replace less-efficient bipolar transistors."

Radiation Survivability Details
The new IRHY7G30CMSE 1000V RAD-Hard MOSFET is an enhancement-mode N-channel device, made with IR's proprietary radiation-hardened gate- and field-oxidation process to achieve stringent single-event upset and total ionizing dose hardness requirements.

The device is single event effect (SEE) hardened with linear energy transfer (LET) of 37 MeV/(mg/cm2). The device retains virtually identical electrical performance up to 100 Krads (Si) total dose.

The radiation hardness of the 1000V MOSFET is far superior to a bipolar transistor, which normally operates at low total dose levels and requires significant de-rating for SEE.

Pricing and Availability
The product is available now in standard JEDEC Solid State Technology Association TO-205AF (TO-39), TO-254AA and TO-257AA packages as well as customer-specified packages. Pricing for the IRHY7G30SE 1000V RAD-Hard power MOSFET begins at $195 each in 500-unit quantities. More information on IR's hi-rel devices is available on the International Rectifier Web site, www.irf.com.