EL SEGUNDO, CA. February 2001 - New 30-, 60-, 100- and 200-volt P-channel R5™ RAD-Hard™ MOSFETs from International Rectifier (NYSE: IRF) have an average of 24 percent lower device on-resistance and 81 percent lower gate charge than similar products in the radiation-hardened MOSFET market.

The new R5 devices have extremely low on-resistance and gate charge. Lower device on-resistance equates to a reduction in conduction loss, boosting circuit and system efficiency. Lower gate charge reduces drive power requirements, simplifies drive circuitry and reduces component count, system weight and design cycle time.

Richard Southwell, International Rectifier HiRel Components Group Marketing Manager, says, "With exceptional radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays and neutron fluence from nuclear detonation."

Applications include radiation-sensitive military avionics and missiles, commercial communication satellites, scientific and surveillance satellites, nuclear reactors, deep-space equipment such as robotic systems for missions to Jupiter or Saturn and strategic command and control systems.

The new devices come in three die sizes and eight package styles. Packaging includes industry-standard hermetic-leaded (thru-hole) and space-saving surface mount, including the tab-less configurations.

Technical Details
The new RAD-Hard MOSFETs have high radiation hardness against total ionizing dose and high immunity to single event effects. For heavy ions with LET less than or equal to 37 MeV/mg/cm2, there is no de-rating of breakdown voltage for gate threshold voltages up to 15V. For heavy ions with an LET of 82 MeV/mg/cm2 there is no de-rating of breakdown voltage for gate threshold voltages up to 8V. The devices are immune to high-energy particles and are hardened against single event gate rupture (SEGR) and single event burn-out (SEB).

The one Mrad total dose rating allows designers to extend equipment lifetime up to 10 times that of the current designs using a 100 Krad device. IR's devices also provide designers with the option of reducing or forgoing shielding requirements.

New R5™ P-Channel Product Matrixm
BVDSS (V)	Part Number	RDS(on) (milliohms)	Qg (nC)	Die Size	Package
30	IRHNJ597Z30	35	65	3	SMD-0.5
	IRHNA597Z60	10	200	6	SMD-2
	IRHF597Z30	70	65	3	TO-39
	IRHY597Z30CM	45	65	3	TO-257
	IRHM597Z60	16	200	6	TO-254
	IRHMS597Z60	11	200	6	Low Ohmic TO-254
60	IRHNJ597034	54	45	3	SMD-0.5
	IRHNA597064	15	140	6	SMD-2
	IRHF597034	89	45	3	TO-39
	IRHY597034CM	64	45	3	TO-257
	IRHM597064	21	140	6	TO-254
	IRHMS597064	16	140	6	Low Ohmic TO-254
100	IRHNJ597130	205	50	3	SMD-0.5
	IRHNA597160	48	160	6	SMD-2
	IRHF597130	240	50	3	TO-39
	IRHF597110	920	12	1	TO-39
	IRHY597130CM	215	50	3	TO-257
	IRHM597160	54	160	6	TO-254
	IRHMS597160	49	160	6	Low Ohmic TO-254
	IRHG597110	960	11	1	14-Pin Side Braze
	IRHQ597110	960	11	1	28-Pin LCC
200	IRHNJ597230	505	50	3	SMD-0.5
	IRHNA597260	102	175	6	SMD-2
	IRHF597230	540	50	3	TO-39
	IRHY597230CM	515	50	3	TO-257
	IRHM597260	108	175	6	TO-254
	IRHMS597260	103	175	6	Low Ohmic TO-254
Notes:"1) Hermetic D2 and D3 packages are available with the same performance specifications as TO-257 and TO-254, respectively."

Pricing and Availability
The new P-channel R5 RAD-Hard MOSFETs are available immediately. Pricing for this new product family begins at US $200 each in 1,000-unit quantities.