EL SEGUNDO, CA, November 2000 - The Defense Supply Center Columbus (DSCC) granted JANS certification for International Rectifier's "FAB 5" wafer fabrication facility located in El Segundo, California. The wafer fab is used to produce the industry's most advanced Radiation Hardened power MOSFETs.

The capability of previous wafer fabrication facilities operated in the 5.0-micron geometry range, where FAB 5 operates at 0.5-micron geometries. The improved geometry means IR can now produce JANS power MOSFETs with higher cell densities, resulting in superior device performance.

Over the past year and a half IR supplied radiation hardended power MOSFETs to full S-level requirements using the FAB 5 facility. This certification will now allow IR to offer QPL versions of its MOSFETS. This is a major benefit to IR and its customers. Most Military and Space customers prefer the use of QPL products over Space level equivalent source control drawings (SCD) or internal supplier drawings.

FAB 5 is the wafer fab that produces IR's R5 Radiation Hardened power MOSFETs. R5 is IR's latest radiation hardended MOSFET technology, producing the lowest RDS(on) and gate charge performance which is fully qualified to MIL-PRF-19500 space-level requirements. MIL-PRF-19500 is the performance requirement specification currently used by nearly every space-level customer.