EL SEGUNDO, CA. February - New 30-, 60-, 100- and 200-volt P-channel R5™ RAD-Hard™ MOSFETs from International Rectifier (NYSE: IRF) have an average of 24 percent lower device on-resistance and 81 percent lower gate charge than similar products in the radiation-hardened MOSFET market.

The new R5 devices have extremely low on-resistance and gate charge. Lower device on-resistance equates to a reduction in conduction loss, boosting circuit and system efficiency. Lower gate charge reduces drive power requirements, simplifies drive circuitry and reduces component count, system weight and design cycle time.

Richard Southwell, International Rectifier HiRel Components Group Marketing Manager, says, "With exceptional radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays and neutron fluence from nuclear detonation."

Applications include commercial communication satellites, nuclear reactors, low Earth-orbit communication systems, robotic systems for missions to Jupiter or Saturn, strategic command/control and surveillance and scientific satellites.

The new devices come in three die sizes and eight package styles. Packaging includes industry-standard hermetic-leaded (thru-hole) and space-saving surface mount, including the tab-less configurations.

Technical Details

The new RAD-Hard MOSFETs have high radiation hardness against total ionizing dose in excess of one Mrads (Si) and high immunity to single event effects. For heavy ions with LET less than or equal to 37 MeV/mg/cm2, there is no de-rating of breakdown voltage for gate threshold voltages up to 15V. For heavy ions with an LET of 82 MeV/mg/cm2 there is no de-rating of breakdown voltage for gate threshold voltages up to 8V. The devices are immune to high-energy particles and are hardened against single event gate rupture (SEGR) and single event burn-out (SEB).

The one Mrad total dose rating allows designers to extend equipment lifetime up to 10 times that of the current designs using a 100 Krad device. IR's devices also provide designers with the option of reducing or forgoing shielding requirements.

Pricing and Availability

The new P-channel R5 RAD-Hard MOSFETs are available immediately. Pricing for this new product family begins at US $200 each in 1,000-unit quantities. More information on IR's new 30-, 60-, 100- and 200-volt P-channel R5 RAD-Hard MOSFETs is available on HiRel page of the International Rectifier Web site, www.irf.com.