EL SEGUNDO, CA. September 2000 - International Rectifier (NYSE: IRF) announced the extension of its line of low voltage HEXFET^® power MOSFETs targeted at automotive applications.

Today's automotive applications such as electric power assisted steering (EPS) and integrated starter-alternators (ISA) demand improved system efficiency. IR's new automotive devices achieve best in class efficiency (low on-resistance) and ruggedness (high avalanche), parameters that have traditionally been traded off against one another.

The avalanche capability of these devices is twice that of previous technology from IR and five times that of industry standard trench technology. Additional benefit is provided by the combination of the new silicon technology with the latest packaging innovations. IR's "Super" packages allow more silicon to be put in the same package footprint. This results in a correspondingly lower R_DS(on) value, and a better thermal path than more traditional package types.

Gordon Gray, Technical Marketing Manager for the Automotive Group at IR said, "The benefits of IR's 'Super package' is evident especially at low silicon R_DS(on) values where the package itself can become the limiting factor in device performance. For example, the IRFBA1404P in the Super-220^TM package offers a 30% increase in current carrying capability than similar devices in an industry-standard TO-220 outline."

The new devices have been optimized specifically for under-the-hood applications. The 40V devices are made for EPS and the 75V devices are made for ISA. Additionally, highly efficient 55V devices have been developed for ABS, allowing the designer to use smaller-die devices in the circuit, reducing size and cost.

"In EPS applications, just switching to IR's new automotive-specific devices can reduce junction temperature by up to 28°C when compared to earlier technology devices. This is extremely important when the EPS MOSFET is required to handle large current surges under certain operating conditions. For example, the control circuit for an EPS system would have to withstand large current surges while the car is being parallel parked. The 4mOhms R_DS(on) rating of the IRF1404 would allow safer, more efficient operation and prevent high temperature shutdown," Gray said.

One of the significant advances in IR's new-generation automotive MOSFETs is the new avalanche rating technique. These new stripe planar devices are now so rugged that avalanche capability can now rated as a purely thermal phenomenon. Designers can now choose a safe operation area for circuits depending on the power MOSFET junction temperature. The IRFP2907 is the first of these devices rated in this manner.

Samples of the new automotive HEXFET power MOSFETs are available immediately. Pricing in 10,000 piece quantities for US delivery starts from $0.79 each for the IRFR2407 to $3.90 each for the IRFP2907.