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International Rectifier Introduces ZVS-Specific, High-Voltage HEXFET® Power MOSFETs Enabling 250kHz Off-Line Power Supplies
New HEXFET® power MOSFETs reduce EMI, increase ruggedness, improve low gate charge and reduce RDS(on) to set world's lowest loss in high frequency, zero-voltage switching power supplies
EL SEGUNDO, CA. June 2000 - International Rectifier (IR®) introduces the Benchmark Series high-voltage HEXFET® power MOSFETs for zero-voltage switching (ZVS) AC/DC power supplies. The new ZVS-specific MOSFETs have fast, yet soft reverse recovery time (trr) characteristics to help reduce EMI emissions in ZVS circuits.
ZVS topologies are increasingly popular in server, telecom and mainframe computer applications as designers strive to increase power density. ZVS topologies enable faster switching frequencies, reducing the size of magnetic components. Therefore, efficient ZVS components contribute substantially to lower power supply system cost and increased reliability.
The new ZVS-specific MOSFETs have typical reverse recovery charge (Qrr) that is 50% less than existing industry-standard MOSFETs and helps reduce one of the main sources of noise in switching power supplies.
Extremely low RDS(on) limits conduction losses with body-diode recovery times as short as 150ns or less that can enable switching speeds up to 250kHz. Competing devices have slower reverse recovery body-diodes that can induce dv/dt stress failure as frequency increases.
Reverse Recovery Time Comparison
Reverse recovery time (trr) comparison between previous industry best, standard and the new IRFPS40N50L ZVS-optimized HEXFET® power MOSFET.
The new ZVS-specific devices offer the designer specialized components to help balance the best overall system design and smaller size with higher fundamental switching frequency and regulatory compliance.
Carl Blake, technical marketing manager at IR states, "The new application-specific MOSFETs make tomorrow's high-frequency, high-efficiency ZVS power supplies practical. 'Quiet' ZVS designs targeting 500kHz are now an achievable target within the next couple of years with IR's new Benchmark devices."
| Part Number |
Package |
BVDSS |
RDS(on) |
Typ trr |
ID |
Samples |
Production |
| IRFPS40N50L |
Super-247™ |
500V |
0.095 ohm |
150ns |
40A |
Jun-00 |
Jul-00 |
| IRFBA31N50L |
Super-220™ |
500V |
0.152 ohm |
150ns |
31A |
Jun-00 |
Jul-00 |
| IRFB17N50L |
TO-220 |
500V |
0.280 ohm |
150ns |
17A |
Jun-00 |
Jul-00 |
| IRFBL17N50L |
Super-D2Pak™ |
500V |
0.280 ohm |
150ns |
17A |
Jun-00 |
Jul-00 |
New International Rectifier Benchmark HEXFET® MOSFETs for ZVS Applications
Pricing for IR's new benchmark MOSFETs for ZVS AC/DC applications begins at $1.94 each in quantities of 10,000. The devices can be sampled now via IR sales channels. Volume production is scheduled for this summer.
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
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