INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

INTERNATIONAL RECTIFIER INTRODUCES POWER MANAGEMENT DEVICES THAT MAXIMIZE BATTERY LIFE

EL SEGUNDO, CA. May 2000 - International Rectifier (IR®) today introduced four new 12V and 20V P-channel HEXFET® power MOSFETs, which set new battery management and power conversion efficiency standards in the TSSOP-8 package. For example, the 12V IRF7701 is a MOSFET with 11 milliohms RDS(on) at 4.5V, 21 percent better than competing devices.

nr000511.jpg - 32421 BytesThe lower RDS(on) contributes to higher power system efficiency, resulting in a longer operating life for portable, battery-operated equipment such as cell phones, digital cameras, notebook computers and other small electronic products. "Using IR's new IRF7701, IRF7702, IRF7750 and IRF7700 HEXFET® power MOSFETs in new or existing designs can lead to smaller and more efficient products," said Jorge Llorens, technical marketing manager for Portable Products at IR. "The addition of this new package style not only shows IR's commitment to the portable and mobile marketplace, but also allows IR to offer one of the broadest ranges of power MOSFET devices in the industry. This enables the designer to use a minimum footprint for the performance required."

The TSSOP-8 package is about 35 percent smaller than the industry-standard SO-8. IR's silicon technology makes the smaller TSSOP-8 devices perform as well as many of the larger SO-8-packaged devices.

In fact, the new 12V TSSOP-8 devices have guaranteed RDS(on) performance with a gate voltage of 1.8V. This efficiency guarantee helps designers to maximize battery life and to simplify circuits, since an additional boost circuit may not be required.

Samples and production quantities are available immediately. Pricing is US $0.95 each for the IRF702, and $1.08 each for the IRF7700, IRF7701 and IRF7750 in 10,000-unit quantities.

Data sheets for these components are available from the IR Web site (www.irf.com) and Fax-On-Demand system (310-252-7100 USA and +44 1883 783 420 Europe).

New HEXFET® Power MOSFETs in the TSSOP-8 Package
Part No. V(BR)DSS Configuration RDS(on) @
4.5V
RDS(on) @
2.5V
RDS(on) @
1.8V*
RDS(on)
improvement vs.
industry best @
4.5V
IRF7701 -12V Single 11mohm 15mohm 22mohm 21%
IRF7702 -12V Single 14mohm 19mohm 27mohm Same
IRF7750 -20V Dual 30mohm 55mohm - 9%
IRF7700 -20V Single 15mohm 24mohm - 12%

*NOTE: RDS(on) performance is guaranteed at 1.8V for 12V devices



For more information:

Visit the HEXFET Power MOSFET web-site, Contact the Technical Assistance Center or your local Sales Rep.

 
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