INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

INTERNATIONAL RECTIFIER OPTIMIZES NEW HEXFET® POWER MOSFETs FOR ISOLATED DC-DC CONVERTERS TO CUT LOSSES MORE THAN 25 PERCENT FOR 3.3V OUTPUT BRICKS

New application-specific primary and secondary MOSFETs for isolated topologies set new benchmarks for efficiency in DC-DC converter applications while improving power density and reducing overall cost.

EL SEGUNDO, CA, January 24, 2000 -- International Rectifier (IR®), the power conversion experts, now offers two new families of HEXFET® power MOSFETs optimized to provide the best possible efficiency for the primary and secondary sections of isolated DC-DC converters with outputs of 3.3 volts. Using these devices in their existing designs, DC-DC converter manufacturers can eliminate more than 25 percent of the losses in their 3.3V-output 200W product lines with minimal design changes. This can translate into a full-load efficiency gain of more than 4 percent for some typical 3.3-volt converters. Considerable gains can also be achieved using the devices in lower power converters.

Carl Blake, Technical Marketing Manager for DC-DC Components at IR indicated that component selection went far beyond normal MOSFET data sheet specifications like BVDSS, RDS(on), Qg, or Qgd that are often applied in isolation from the application. In fact, a matrix of more than 200 possible component definitions was eventually tested for each application covering every major power semiconductor technology including trench, planar, stripe and cellular processes.

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On the primary side of a DC-DC converter, most applications currently use a forward converter topology with either active or passive reset of the transformer. A new planar technology was chosen for the primary MOSFETs of the forward converter because it provides the best efficiency trade off between switching and conduction losses (See chart below). Using these primary-side MOSFETs alone can yield as much as 3 percent improvement in total end converter efficiency versus competitive solutions.

Primary FETs

Part No. BVDSS Vgs RDS(on) max Qg typ Qgd typ Package Application
IRFS31N20D 200V 30V 82mOhms 65nC 30nC D2Pak Primary MOSFET,Forward converter,Passive Resetup to 120W
IRFS41N15D 150V 30V 45mOhms 67nC 32nC D2Pak Primary MOSFET,Forward converter,Active Resetup to 150W
IRFR13N20D 200V 30V 235mOhms 25nC 12nC D-Pak Primary MOSFET,Forward converter,Passive Resetup to 50W
IRFR18N15D 150V 30V 125mOhms 25nC 13nC D-Pak Primary MOSFET,Forward converter,Active Resetup to 50W

What may initially seem to be an inferior device, the IRFR18N15D, would in fact work better for lighter load current due to its superior switching characteristics. The lower cost of this D-Pak device, due to the use of less silicon, makes it an ideal choice in lower power converters.

On the secondary side of a forward converter, the choices of MOSFETs depend on the overall switching topology with different optimization techniques controlling the cost/efficiency trade off. It is possible to increase end efficiency of the whole converter close to one percent just by using optimized secondary devices (See chart below). Typically a designer will use either single or paralleled 30V SO-8 devices to obtain the output current. The choice of multiple packages is very useful, spreading the heat more evenly throughout the system to reduce thermal density. However, for higher power designs the new Super-D2Pak™ IRFBL3703, replacing up to 4 SO-8s, is an excellent device for higher current space-critical designs.

Secondary FETs
Part No. BVDSS Vgs RDS(on) max Qg typ Qgd typ Package Application
IRF7463 30V 12V 8mOhms 36nC 12nC SO-8 Secondary MOSFET, ICControlled Synchronous Rectification, Iout = 10A +
IRF7455 30V 12V 7.5mOhms 45nC 13nC SO-8 Secondary MOSFET,Synchronous Rectification,Iout = 10A +
IRF7456 20V 12V 6mOhms 45nC 13nC SO-8 Secondary MOSFET,Synchronous Rectification,Iout = 10A +
IRFBL3703 30V 16V 2.5mOhms 159nC 33nC Super-D2Pak™ Secondary MOSFET,Synchronous Rectification,Iout = 50A +

"These new MOSFETs are just part of IR's overall commitment to provide benchmark performance and solutions for the DC-DC market," said Alex Lidow, CEO at IR. "The MOSFETs fit perfectly with a new synchronous rectification IC just being introduced, as well as MOSFETs optimized for synchronous buck applications that we introduced earlier. Our goal is to provide the best possible component set for DC-DC converters to maintain efficiency at acceptable levels as logic voltages continue to drop."

Samples and data sheets for all devices are available immediately on IR's special DC-DC conversion web site at http://dc2dc.irf.com, with volume shipments commencing in March, 2000.



For more information:

Contact the Technical Assistance Center or your local Sales Rep.

 
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