Rad-Hard MOSFETs

Military and space applications provide a unique challenge for today's system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. IR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challenge for over 25 years. With the introduction of the first RAD-Hard MOSFET in 1985 to its latest generation of devices, IR has continually exceeded engineers expectations.

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Newest Parts

Press Releases

IR HiRel offers enhanced radiation hardened MOSFET family for mission-critical applications in space

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IR's R8 RAD-Hard MOSFETs Increase Efficiency Up to 6% While Reducing Footprint 50% compared to Existing Solutions

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IR Introduces Dual Power MOSFETs in Single Compact Hermetic LCC-6 Surface Mount Package For Lightweight Space Applications

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MOSFETs in New Patented SMD0.2 Package Drastically Reduce System Size and Weight in HiRel Space Applications

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IR's Expanded Family of Radiation Hardened Logic Level MOSFETs Simplify Design and Increase Reliability

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Quality Conformance Testing

    

Unlike standard commercial products, HiRel products must be submitted to various levels of quality conformance testing to ensure that the products are capable of performing to specifications in the often harsh environments of military and space applications. Both the United States and European community have each developed specifications that detail the sequence of quality conformance testing.

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883 and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels (Note: the JAN level is not allowed for MOSFETs).

International Rectifier HiRel Products Group manufactures and tests hermetic products to one of three distinct quality conformance levels: (1) commercial hermetic, (2) source control drawing (SCD), or (3) MIL-PRF-38534, MIL-PRF-38535 qualified. The HiRel Products Group also provides screened plastic encapsulated devices.

     
     

Screening and Quality Conformance Inspection Requirements

 

QPL Listing - Discretes
 
 

Glossary

Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications.

Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products.

Level S: Class level S defines the screening requirements for high reliability space applications as specified in MIL-STD-883 and is intended for use in class K products.

JAN: JAN (Joint Army Navy) is the prefix assigned by the DSCC to designate devices on the DSCC qualified parts list.

JANTX: Military screening level as specified in MIL-PRF-19500 for a DSCC qualified device.

JANTXV: Military with visual inspection screening level as specified in MIL-PRF-19500 for a DSCC qualified device.

JANS: Space level screening as specified in MIL-PRF-19500 for a DSCC qualified device.

Screening and Quality Conformance Inspection Requirements

  RAD-Hard™ MOSFETs

 

 Discrete QPL Products

 

Complete HiRel Product Nomenclature

 
Single Event Effects Test Report
Product Group Date PDF
IRUH3301 Series October 2010 PDF
R7, 60V, N-Channel (Fab 2) September 2009 PDF
R7, 60V, P-Channel (Fab 2) September 2009 PDF
R6, 100V, N-Channel (Fab 2) September 2009 PDF
R6, 150V, N-Channel (Fab 2) September 2009 PDF
R6, 200V, N-Channel (Fab 2) September 2009 PDF
R6, 250V, N-Channel (Fab 2) September 2009 PDF
R5, 30V, N-Channel (Fab 2) September 2009 PDF
R5, 30V, P-Channel (Fab 2) September 2009 PDF
R5, 60V, N-Channel (Fab 2) September 2009 PDF
R5, 60V, P-Channel (Fab 2) September 2009 PDF
R5, 100V, N-Channel (Fab 2) September 2009 PDF
R5, 130V, N-Channel (Fab 2) September 2009 PDF
R5, 200V, N-Channel (Fab 2) September 2009 PDF
R5, 200V, P-Channel (Fab 2) September 2009 PDF
R5, 250V, N-Channel (Fab 2) September 2009 PDF
RDHA701FP10A8QK June 2009 PDF
R6, 600V, N-Channel March 2006 PDF
IRUH33PA13B20K December 2005 PDF
IRUH33P253B1M December 2005 PDF
S Series July 2003 PDF
Logic-Gate R7, 60V, N-Channel
R6, 100V N-Channel
R5 130V, N-Channel, SEE Process, Depletion		 May 2003 PDF
Logic Gate R7, 60V, P-Channel
R5, 60V, P-Channel		 November 2002 PDF
G4, 550V, N-Channel, SEE Process June 2001 PDF
RIC7113 January 2000 PDF
G4, 30V, N-Channel
G4, 100V, N-Channel
G4, 60V, P-Channel
G4, 100V, P-Channel
G4, 200V, P-Channel
G4, 400V, N-Channel, SEE Process		 June 1998 PDF
G4, 30V, N-Channel
G4, 200V, N-Channel
G4, 200V, N-Channel, SEE Process
G4, 250V, N-Channel, SEE Process
G4, 400V, N-Channel, SEE Process
G4, 500V, N-Channel, SEE Process		 February 1998 PDF

 
Total Ionizing Dose Test Report
Product Group PDF
IRUH3301* PDF
IRUH3301* (ELDRS Test Report) PDF
IRUH33PA13B20K PDF
IRUH33PA13B20K (ELDRS Test Report) PDF
IRUH33P253B1M PDF
IRUH33P253B1M (Low Dose Report) PDF
RDHA701CD10A2NK PDF
RDHA701FP10A8CK PDF
RDHA701FP10A8QK PDF
RDHA710FR10A1NK PDF
RDHA710SE10A2QK PDF
RIC7113 PDF
Prompt Dose Results
Product Group PDF
IRHNA57064 PDF
IRHNJ57130 PDF

 

Neutron Testing Results
Product Group PDF
IRUH3301* PDF
IRH7250 PDF
IRH57260 PDF
IRH67260 PDF
IRUH33P253B1M PDF
IRUH33PA13B20K PDF
RDHA701CD10A2NK PDF
RDHA701FP10A8QK PDF
RDHA710FR10A1NK PDF
RDHA710SE10A2F PDF
RDHA710SE10A2S PDF

 
More Reports
Product Group Report Name PDF
ART2800 TID, SEE and Neutron Report PDF
R5 MOSFET Proton Test Report PDF
RDHA710SE10A2QK Proton Test Report PDF