HiRel Rad-Hard MOSFETs |
| Military and Space applications provide a unique challenge for today’s system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. International Rectifier, with it’s proprietary RAD-Hard MOSFET processes has been meeting this challenge for over 20 years. With the introduction of the first RAD-Hard MOSFET in 1985 to its latest generation of devices, IR has continually exceeded engineers expectations.
Gen IV
- 60V-600V
- N/P-Channel
- 100K-1000K Rads
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R5
- 30V-250V
- N/P-Channel
- 100K-1000K Rads
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R6
- 100V-1000V
- N-Channel
- 100K-300K Rads
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R7 Logic Level
- 60V-250V
- N/P-Channel
- 100K-300K Rads
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The trend for higher efficiency power electronics including DC-DC Converters and motor controllers is also true for military and space hardware. IR’s latest generation of RAD-Hard MOSFETs meet this challenge while offering superior Single Event Effects (SEE) and Total Ionizing Dose (TID) performance. IR’s R7 family is the first RAD-Hard MOSFET with a logic-level threshold voltage. The R6 family of RAD-Hard MOSFETs delivers improvements in Rds(on) while offering a 10X improvement in SEE.
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| Reliability Screening |
| International Rectifier’s HiRel Division is MIL-PRF-19500 qualified which allows for unparalleled capabilities in the design and development of radiation hardened power MOSFETs. The following screening levels are provided in order to meet our diverse customer needs.
 COTS: Commercial Off The Shelf -> No burn-in
QPL: Qualified Product List -> Qualified to Military Standard Processes and Specifications
- Screening Levels: JANTX, JANTXV, and JANS
QIRL: In-House QPL
- Screening Levels: TX, TXV, and S to MIL-PRF-19500 Standard
QPL RAD-Hard™ MOSFET Portfolio
Quality Conformance and Screening
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| Radiation Testing |
| Radiation effects on Power MOSFET devices are well known and include input threshold voltage (VGS(th)) shifts, reduction in breakdown voltage (BVDSS), increase in leakage currents (IDSS, IGSS), burnout from transients, and degradation in transconductance.
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
All RAD-Hard™ MOSFET wafers are tested for total dose per MIL-PRF-19500, Group D per Method 1019 of MIL-STD-750
RAD-Hard™ MOSFET products are characterized for SEE by functional group (60V, 100V, etc.)
Radiation Reports
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| Packaging |
| International Rectifier’s RAD-Hard™ MOSFETs come in both Thru Hole and Surface Mount, Hermetically Sealed packages. A hermetically sealed package is generally required to house a semiconductor device to insure the device’s reliability and ruggedness for high reliability design applications. Hermetic surface mount technology (SMT) have been in existence for more than 20 years. While the leaded packages continue to find their use in many current designs, a vast majority of new electronic equipment designs have been integrating new SMT packages, taking advantage of its smaller size, lighter weight, and the excellent thermal performance that the new SMTs offer. Many high frequency circuit designs benefit from the inherently low inductance and low resistance these packages provide. In many instances, the new SMTs are the absolute requirement. There are a number of lead form options which are available upon request for either Thru Hole or SMT packages including standard copper ribbon leads for the entire SMT product line.
Surface Mount Packages
Thru-Hole Packages
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International Rectifier’s R6™ technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC Converters and motor controllers.
Features
International Rectifier’s R7™ Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture (SEGR) and single event burnout (SEB) immunity. These devices are used in applications such as synchronous buck converters, linear pass elements in LDOs, and replacements for 2N2222 and 2N2907 transistors.
