HiRel RAD-Hard MOSFETs

Military and Space applications provide a unique challenge for today’s system designers. Space hardware must operate in extreme environmental conditions including exposure to severe ionizing radiation which necessitates the use of radiation-hardened components. International Rectifier, with it’s proprietary RAD-Hard MOSFET processes has been meeting this challenge for over 25 years. With the introduction of the first RAD-Hard MOSFET in 1985 to its latest generation of devices, IR has continually exceeded engineers expectations.

RAD-Hard N-Channel MOSFET
The largest selection of RAD-Hard and QPL power MOSFETs

    Gen 4
  • 30V-600V
  • 100K-1000K Rads
    R5
  • 30V-250V
  • 100K-1000K Rads
    R6
  • 100V-1000V
  • 100K-300K Rads
    R7 Logic Level
  • 60V-250V
  • 100K-300K Rads
    R8 Trench
  • 20V-60V
  • 100K-300K Rads

RAD-Hard P-Channel MOSFET
The largest selection of RAD-Hard and QPL power MOSFETs

    Gen 4
  • -60V to -200V
  • 100K-1000K Rads
    R5
  • -30V to -200V
  • 100K-1000K Rads
    R6 (Dev)
  • -60V to -200V
  • 100K-300K Rads
    R7 Logic Level
  • -60V to -100V
  • 100K-300K Rads

The trend for higher efficiency power electronics including DC-DC Converters and motor controllers is also true for military and space hardware. IR’s latest generation of RAD-Hard MOSFETs meet this challenge while offering superior Single Event Effects (SEE) and Total Ionizing Dose (TID) performance. The R6 family of RAD-Hard MOSFETs delivers improvements in Rds(on) while offering a 10X improvement in SEE. IR’s R7 family is the first RAD-Hard MOSFET with a logic-level threshold voltage. IR’s R8 Trench technology, the latest addition to the RAD-Hard MOSFET product family, is developed to meet the efficiency demand for point of load (POL) voltage regulators.

R8 RAD-Hard Trench MOSFETs R7 RAD-Hard Logic Level MOSFETs
R6 RAD-Hard MOSFETs Packaging
Reliability Screening Radiation Testing
Part Number Nomenclature QPL RAD-Hard MOSFETs
 R8 Trench Family
R8 power MOSFET is the latest generation of radiation hardened MOSFET from IR. The first RAD-Hard MOSFET taking full advantage of Trench technology offers an unmatched on-resistance (RDSon) and total gate charge (QG). The first device in the series has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A. The new product is optimized to be used as the power switches for a point-of-load voltage regulator design applications. It offers an increase in efficiency performance by as much as 6% or more over the existing product solutions.

R8 Technology
R8 Product List

Features
N channel 20 V BVDSS
SEE immunity to LET of 81 MeV-cm²/mg
TID ratings at 100Krads and 300Krads
Compatible with 3.3V and 5V logic devices with VGS rating to 12V
Low On-Resistance (RDS(on)), 12 milliohms typical (SMD 0.2 package)
Low total gate charge (QG), 18 nC typical
Available in SMD 0.2,and TO-39 packages
JANS Space level reliability screen per MIL-PRF-19500

 R7 Logic Level Family
International Rectifier’s R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture (SEGR) and single event burnout (SEB) immunity. These devices are used in applications such as synchronous buck converters, linear pass elements in LDOs, and replacements for 2N2222 and 2N2907 transistors.

R7 Product List

Features
Logic Level CMOS and TTL Compatible Inputs
Simple Drive Requirements
Fast Switching
SEE Immunity to LET of 82MeV
TID Ratings at 100K and 300Krad(Si)

 R6 Family
International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC Converters and motor controllers.

R6 Product List

Features
Increases system efficiency by 2.5%*
Reduces MOSFET power loss by 30%*
Decreases RDS(on) up to 40%
SEE Immunity to LET of 90MeV
TID Ratings of 100 and 300Krad (Si)
* Compared to previous generation devices

 Reliability Screening
International Rectifier’s HiRel Division is MIL-PRF-19500 qualified which allows for unparalleled capabilities in the design and development of radiation hardened power MOSFETs. The following screening levels are provided in order to meet our diverse customer needs.

  COTS: Commercial Off The Shelf -> No burn-in
  QPL: Qualified Product List -> Qualified to Military Standard Processes and Specifications
    - Screening Levels: JANTX, JANTXV, and JANS
  QIRL: In-House QPL
    - Screening Levels: TX, TXV, and S to MIL-PRF-19500 Standard

QPL RAD-Hard MOSFET Portfolio
Quality Conformance and Screening

 Radiation Testing
Radiation effects on Power MOSFET devices are well known and include input threshold voltage (VGS(th)) shifts, reduction in breakdown voltage (BVDSS), increase in leakage currents (IDSS, IGSS), burnout from transients, and degradation in transconductance.

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.

  All RAD-Hard MOSFET wafers are tested for total dose per MIL-PRF-19500, Group D per Method 1019 of MIL-STD-750
  RAD-Hard MOSFET products are characterized for SEE by functional group (60V, 100V, etc.)

Radiation Reports

 Packaging
International Rectifier’s RAD-Hard MOSFETs come in both Thru Hole and Surface Mount, Hermetically Sealed packages. A hermetically sealed package is generally required to house a semiconductor device to insure the device’s reliability and ruggedness for high reliability design applications. Hermetic surface mount technology (SMT) have been in existence for more than 20 years. While the leaded packages continue to find their use in many current designs, a vast majority of new electronic equipment designs have been integrating new SMT packages, taking advantage of its smaller size, lighter weight, and the excellent thermal performance that the new SMTs offer. Many high frequency circuit designs benefit from the inherently low inductance and low resistance these packages provide. In many instances, the new SMTs are the absolute requirement. There are a number of lead form options which are available upon request for either Thru Hole or SMT packages including standard copper ribbon leads for the entire SMT product line.

Surface Mount Packages
Thru-Hole Packages

 Part Number Nomenclature

RAD-Hard MOSFETs

Discrete QPL Products