|
FlipFET™ power MOSFET
|
|
IR’s new FlipFET™ packages embody true chip scale
packaging (CSP) technology, giving rise to a new generation
of super-compact power architectures with increased power
density. Achieving the world’s first 100% silicon-to-footprint
ratio for power MOSFETs, in this new package provide the
smallest footprint, lowest profile, and lightest weight solution
possible. In this new proprietary package, all of the terminals
are on a single side of the die, because the die is the
package. So stray inductance and other losses associated
with device packaging are minimized or eliminated. With this
new FlipFET package, footprints are reduced by up to 1/3rd
compared to standard lead frame based power silicon.
|
|
THE IR ADVANTAGE
 | Up to one-third the area and same performance vs. standard SOIC packages |
| Ultra low RDS(on) based on IR HEXFET® trench MOSFET technology |
| Low profile at <0.8mm |
| Virtual elimination of package parasitics devices |
| Compatibility with standard SMT techniques |
| Fully electrically tested, delivered in tape-and-reel |
|
APPLICATIONS
| Smart phones |
| Mobile phones |
| MP3 Players |
| Battery packs |
| Portable high-density disk drives |
|
SPECIFICATIONS
Part Number |
BVDSS |
VGS |
RDS(on) |
TJ(max.)
|
Configuration |
|
-20V |
± 12V |
65mOhms |
150°C |
Single P |
|
20V |
± 12V |
40mOhms |
150°C |
Dual N,
Common Drain |
|
 |
 |
|
|
Application Notes
AN-1011: Assembly of FlipFET™ Devices
Technical Papers
Bi-directional FlipFET™ MOSFETs for Cell Phone Battery Protection Circuits
FlipFET™ MOSFET Design for High Volume SMT Assembly
Chip Scale Packaging Technology Increases Cell Phone Talk Time
A New Generation of Wafer Level Packaged HEXFET® Devices
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
|
|
|
