In the ongoing quest to increase the power density and speed of data processing circuits, the need for higher density power supplies continues to grow. The new IRFB/S/SL3206, IRFB3077, and IRFB4110 MOSFETs enable improved power density by lowering RDS(on) by up to 10% compared to previous industry standards and offer superior synchronous rectification performance through improved RDS(on) in AC-DC SMPS applications.

The highly efficient 75V and 100V HEXFET power MOSFETs, in a TO-220 package, enable a part count reduction of 30% or more in secondary synchronous rectification and fullbridge topology power supplies compared to competing devices in the same package.

The 75V MOSFETs are designed to shrink circuit size and increase power density in high power server AC-DC switch-mode power supplies (SMPS) with 12V output or 48V rail ORing circuits. The 100V devices are well suited to high power flyback secondary rectification and offer enhanced primary-side efficiency in high power telecom isolated 48V DC-DC converters. In addition, the new MOSFETs can be used in stepper motor and brushless DC motor drive applications.

Benefits

	Industry’s Lowest RDS(on)
	Covering 12V – 24V output SMPS power requirements
	Benchmark performance in AC-DC SMPS applications

APPLICATIONS

	AC-DC servers, laptop adaptors, and desktop power supplies
	Telecom and server ORing function for 48V rails
	Primary side 24V VIN DC-DC and low voltage motor drive applications

FEATURES

	Tailored for synchronous rectification applications
	Enable lower conduction losses for higher efficiency and greater power density
	Available in TO-220, D2PAK, D2PAK-7 and TO-262 packages
	Available lead-free
	Qualified Industrial and moisture sensitivity MSL1

HEXFET® MOSFETs can be used with IR’s Smart Rectifier to provide the ultimate Smart Rectifier Chipset solutions. SmartRectifier IR1166/67 is a secondary control IC with built in 7A gate drive. Operating independently from the primary side, it uses a proprietary voltage level detection technique to minimize wasteful secondary reactive currents to maximize secondary efficiency. The proprietary 200V HVIC technology allows direct sensing and control of the HEXFET MOSFETs.