International Rectifier has announced the successful development of a revolutionary gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such as computing and communications, automotive and appliances. More...
IR’s GaN-based Power Device Platform Named EDN Innovations Awards’ Finalists (February 4, 2009) |
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