IR provides outsourced services for Si epitaxy used in power device applications.
Production proven epitaxial processes are available for power MOSFETs, bipolar power
discrete devices, and power control integrated circuits. IR has production processes
for epitaxy on heavily doped Sb, As, B and P (including red-phosphorus) substrates as
well as thin substrates used to minimize RDS-ON device performance.
In addition to providing epi on bare substrates we process epitaxy on substrates with
buried layers for power management integrated circuits. Epi processes for substrates with
buried layers containing As, B, P or Sb, and combinations of these buried layers, are
available using atmospheric pressure and/or reduced pressure processing.
IR Epitaxial Services operates 24 hours per day and 7 days per week in order to meet the
needs of our customers for short turn-around time. Our customer base is world-wide and
includes some of the largest names in semiconductor manufacturing as well as research
institutes and universities.
IR Epitaxial Services is QS-9000, ISO 9001:2000 and ISO 14001 certified. Certification
to the ISO/TS 16949 standard is scheduled to occur during Q3-CY2005.