IR provides outsourced Si and SiGe epitaxial services for silicon on insulator structures.
Low voltage CMOS integrated circuits, radiation hardened semiconductors and MEMS devices
commonly use a Si layer on an insulating substrate in order to provide latch-up immunity
and minimal leakage currents between adjacent devices. IR offers epitaxial services for
Si and SiGe on sapphire (SOS), SIMOX, bonded wafers (e.g. UnibondTM, NanocleaveTM, BESOI)
as well as the epitaxial processes necessary for the formation of the etch-stop layers
and active device host layers in the bonded wafer technologies. IR offers the unique
opportunity to counter-dope P++ epi layers with Ge in order to reduce stress in the film
and improve wafer flatness in BESOI wafers used in MEMS applications.
IR Epitaxial Services operates 24 hours per day and 7 days per week in order to meet the
needs of our customers for short turn-around time. Our customer base is worldwide and
includes some of the largest names in semiconductor manufacturing as well as research
institutes and universities.
IR Epitaxial Services is QS-9000, ISO 9001:2000 and ISO 14001 certified. Certification
to the ISO/TS 16949 standard is scheduled to occur during Q3-CY2005.