INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

DirectFET® Rating Calculator

The DirectFET® Rating Calculator, shown next, uses the equations generated in the thermal circuit analysis and is designed to allow for fast and accurate rating calculations with a simple tabular parameter entry format.

DirectFET®Part Number R1 R2 R3 "Can" size
IRF6603 0.33 0.97 0.80 Medium (MT)
IRF6604 0.99 2.60 1.10 Medium (MQ)
IRF6607 0.33 0.97 0.80 Medium (MT)
IRF6608 1.08 2.58 0.98 Small (ST)
IRF6609 0.33 0.97 0.80 Medium (MT)
IRF6610 Small (SQ)
IRF6611 0.50 1.50 0.80 Medium (MX)
IRF6612 0.50 1.50 0.80 Medium (MX)
IRF6613 0.33 0.97 0.80 Medium (MT)
IRF6614 1.08 2.58 0.98 Small (ST)
IRF6616 0.50 1.50 0.80 Medium (MX)
IRF6617 1.08 2.58 0.98 Small (ST)
IRF6618 0.33 0.97 0.80 Medium (MT)
IRF6619 0.50 1.50 0.80 Medium (MX)
IRF6620 0.50 1.50 0.80 Medium (MX)
IRF6621 Small (SQ)
IRF6623 1.08 2.58 0.98 Small (ST)
IRF6626 1.08 2.58 0.98 Small (ST)
IRF6631 Small (SQ)
IRF6633 Medium (MP)
IRF6635 0.50 1.50 0.80 Medium (MX)
IRF6636 1.08 2.58 0.98 Small (ST)
IRF6637 Medium (MP)
IRF6644 Medium (MN)
IRF6645 Small (SJ)
IRF6646 Medium (MN)
IRF6648 Medium (MN)
IRF6655 Small (SH)
IRF6662 Medium (MZ)
IRF6665 Small (SH)
IRF6668 Medium (MZ)
IRF6678 0.50 1.50 0.80 Medium (MX)
IRF6691 0.33 0.97 0.80 Medium (MT)

Required Inputs
Thermal Parameter "R1" oC/W
Thermal Parameter "R2" oC/W
Thermal Parameter "R3" oC/W
Rth substrate-ambient oC/W
Rth CAN-ambient (or heat sink) oC/W
Ambient temperature oC
Maximum Junction temperature oC
Hot Rdson (at Tj max.) Ohm

Result
Maximum permitted power W
Maximum permitted current
(Low frequency only)
A
Power through substrate W
Power through heatsink W

    DirectFET® Rating Calculator - notes on its use
  1. For high frequency applications use the "maximum permitted power" box.
  2. For low frequency applications, where the switching losses are not significant, enter the worst-case Rdson and use the "maximum permitted current" box.
  3. Substrate thermal resistance values may be obtained from manufacturer's material data but must be assessed for the correct device footprint size, board thickness and power rating.
  4. Heat sink thermal resistance may be taken from manufacturer's curves - include mounting interface Rth as appropriate.
  5. Where chassis or case cooling to the "Can" is used, figures in Appendix "B" may provide some guidance. For cases where there is no additional heat sinking applied to the "Can", Appendix "C" provides guidance for the two "Can" sizes currently available.
  6. With fan or forced cooling, Rth values tend to be constant irrespective of power. This makes easier use of the DirectFET® Rating Calculator. Where however Rth varies considerably with power, estimate the relative power flow through "Can" and substrate and run the calculator. With that result, review the resulting power flow, check if thermal resistance values are still correct for those power levels- if not, adjust, re-run calculation and re-check. Eventually, the power flows through substrate and heat sink will align with their thermal resistances for those particular power flows.

An example of this procedure is given in Appendix "D".

Return to Application Note 1059 - DirectFET® Thermal Model and Rating Calculator

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