Increasing Power Density Using DirectFET®; MOSFETs
|
|
Two DirectFET MOSFETs Can Replace Four S0-8 Devices
|
- Higher performance in same size
- Highest current density once again
- Same board size, more output power
- IRF6644 + IRF6613 Replace 2xIRF7495 + 2xIRF7842
|
"Play Audio
|
What problems do low- and mid-voltage DirectFET MOSFETs solve?
- Heat – thermal dissipation per in2
- DirectFET MOSFETs are the first surface mount products to make a significant change to the method of removing heat
from high density circuits
- It also has the lowest package resistance,
- Lowest inductance and profile
- Hi density
- DirectFET MOSFETs small size, ease of layout, low profile and low parasitic impedances make high density possible if High frequency is desired
- DirectFET MOSFETs allow heat to be removed from both the top and the bottom, enabling higher density designs
- Reduces the cost of this improved performance
|
IRF6644 Mid-Voltage Product
Goals for isolated dc-dc converters:
- Replace two industry-best 100VN/80VN primary side SO-8s (or Power Paks) with a single DirectFET MOSFET in 48Vin, 240W Half-Bridge DC Bus Converter
- Keep the gate charge of single DirectFET MOSFET below 50nC in order not to overheat the driver
|
Package |
RDS(on) max. (each) |
ID @25°C (amp) |
Qg typ. |
Qgd typ. |
| 2 x IRF7495 |
SO-8 |
22 |
7.3 |
68 |
23.4 |
| 1 x IRF6644 |
DirectFET |
13 |
60 |
36 |
12 |
|
|
"Play Audio
|
DirectFET vs. SO8 Performance*

* IRF7493 is only 80V BVdss, vs 100V BVdss for IRF6644
IRF6644 (100VN DirectFET) Efficiency Results

IRF6644 has 0.3% higher efficiency than two IRF7495 in parallel confirming one DirectFET can replace two SO-8 devices
200W Temperature Comparison 48Vin, 8Vout, 220kHz, 400LFM Airflow

|
|
|