DirectFET®; MOSFET: Mechanical Testing

Substrate Bend Testing
  • Curve tracer was used to monitor the gate, looking for: gate leakage, open or short circuit
  • For the capacitors a capacitance meter was used to look for +/-20% shift in capacitance
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Substrate Bend Test Measurements
Ceramic Capacitors:
  • Notorious for board attach strength problems
  • DirectFET technology has similar appearance
  • DirectFET technology more than doubles the board deflection capability before failing, in respect to the ceramic capacitor
Mortality Curves


Note: The capacitor fails before the DirectFET MOSFET

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Vibration Testing


  • Tests carried out in accordance with BS 2011:Part 2.1Fd “Random Vibration – wide band general requirements” specifications.
  • 3hrs testing showed 0/16 fails at each attitude
 
Drop/Shock Testing
Compression Testing

IR’s proprietary DirectFET®; technology is covered by US Patent 6,624,522 and other US and foreign pending patent applications.