Mechanical Engineer
Substrate Bend Testing
Curve tracer was used to monitor the gate, looking for: gate leakage, open or short circuit
For the capacitors a capacitance meter was used to look for +/-20% shift in capacitance
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Vibration Testing
Tests carried out in accordance with BS 2011:Part 2.1Fd “Random Vibration – wide band general requirements” specifications.
3hrs testing showed 0/16 fails at each attitude
Drop/Shock Testing
Compression Testing
Tests & Reliability
Completed and Qualified to Spec
Solder standoff trials
Screen aperture design
Placement force
Solder vendors
Substrate bend strength measurements
Package parasitics
Shock/drop testing
Vibration testing
Temperature/power cycling on IMS
Temperature/power cycling on ceramic
Temperature/power cycling on Pb-free solder
High frequency parasitic evaluation
HTRB, HTGB, THB
Moisture absorption
DirectFET MOSFET Outlines
The new method of outline identification breaks all devices up into 3 die sizes within each can.
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IR’s proprietary DirectFET®; technology is covered by US Patent 6,624,522 and other US and foreign pending patent applications.