Substrate Bend Testing
- Curve tracer was used to monitor the gate, looking for: gate leakage, open or short circuit
- For the capacitors a capacitance meter was used to look for +/-20% shift in capacitance
Click here for more information.
|
|
Vibration Testing
- Tests carried out in accordance with
BS 2011:Part 2.1Fd
“Random Vibration – wide band general requirements”
specifications.
- 3hrs testing showed 0/16 fails at each attitude
|
|
Drop/Shock Testing
|
Compression Testing
|
 |
Tests & Reliability
Completed and Qualified to Spec
- Solder standoff trials
- Screen aperture design
- Placement force
- Solder vendors
- Substrate bend strength measurements
- Package parasitics
- Shock/drop testing
- Vibration testing
- Temperature/power cycling on IMS
- Temperature/power cycling on ceramic
- Temperature/power cycling on Pb-free solder
- High frequency parasitic evaluation
- HTRB, HTGB, THB
- Moisture absorption
Click here for more information.
Click here for more information.
|
DirectFET MOSFET Outlines
The new method of outline identification breaks all devices up into 3 die sizes within each can.
|
Click here for more information.
IR’s proprietary DirectFET®; technology is covered by US Patent 6,624,522 and
other US and foreign pending patent applications.
|
|
|
Printer Friendly Version
