DirectFET®; MOSFET: Device markings and
Pad Numeration
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Contact Configuration
- The source and gate connections are made directly to the die surface, while the remainder of the surface is coated with passivation.
- The drain connection is formed by a plated copper can, which is bonded to the drain side of the silicon die. Both the can’s contact
areas, must be soldered to the substrate (one might act merely as a mechanical anchor).
NOTE: Using tracks of similar size under both drain contacts will help to
ensure that the device does not tilt during reflowing!
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Suggested PAD numbering
If pad numbering is required to produce a component outline within the library of a CAD system,
International Rectifier recommends that the convention shown in Fig. 2 is adopted. This makes it
easier to discuss any issues that may arise during design and assembly.
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IR’s proprietary DirectFET®; technology is covered by US Patent 6,624,522 and
other US and foreign pending patent applications.
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