DirectFET®; MOSFET: Board Layout Suggestions
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Ease of Layout
- Easier board layout
- Easier to parallel
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Board layout design tips
- Large-area tracks optimize electrical and thermal performance.
- DirectFET MOSFETs placed in parallel using simple layouts. Recommended
separation >0.500mm (0.020”).
- Although, rework capabilities might affect the minimum separation.
- Micro-screen design and desoldering tool type may affect how
closely devices are placed to each other and to other components.
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Designed for Ease of Paralleling
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- For those applications that must place a switch between two busses such
as OR’ing or load management, the gates can be daisy chained together
between the two busses.
- This is not suggested on sync buck layouts due to paralleled low gate impedance.
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Board Layout Example: 4-phase VRM Module Using DirectFET MOSFETs
- Single DirectFET MOSFET pair/phase for current up to > 25A/phase in a 3.8in x 1.25in footprint for a total of 100A. Existing best 60A.
- Low profile allows the DirectFET MOSFET to be mounted on the back of the board and enables thicker heatsink to get a better
efficiency/current result while stay within VR 9, VR 10 outline specifications.
IR’s proprietary DirectFET®; technology is covered by US Patent 6,624,522 and
other US and foreign pending patent applications.
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