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IR’s DirectFET® package enables system benefits such as reduced footprint, improved PCB layout, reduced EMI, and improved thermal characteristics over other plastic package devices. The device electrical parameters are tuned specifically for improved audio performance. In addition, class D audio application critical parameter such as internal Gate Resistance, RG(int), has a guaranteed maximum value for improved dead time control. This is an important factor to reduce system THD level. This innovative solution enables customers to provide high performance audio systems with better reliability and higher amplifier output power.
DirectFET® MOSFETs
Specifications
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