Electric Power Steering systems continue to grow in importance as an efficient replacement for existing hydraulic power steering helping to improve vehicle fuel economy, lower system cost, and reduce system size and weight while improving reliability and comfort. EPS/EHPS is also emerging as the key enabler of fourwheel steering, a premium vehicle feature that dramatically reduces the vehicle turning radius. IR automotive planar HEXFET Power MOSFET technology has demonstrated exceptional robustness in many demanding applications such as EPS, with low onresistance, superior avalanche energy handling, and latch-up immunity. Recent advances in IR Trench MOSFET technology provide similar robustness to IR's planar technologies with as much as 40% lower R_DS(ON) per unit area. This landmark improvement in robust and ultra-low R_DS(ON) is of particular interest in the Electric Power Steering application. IR’s family of Automotive Trench MOSFETs are now available. The IRF2804S-7P and IRF2804S are benchmark parts ideal for power steering applications. The former offers 1.6m and 160A continuous current handling capability in a 7 lead D²Pak package.

IR's robust high-voltage gate drive IC technology is proving to have unique use in the EPS low-voltage application. Many generations and refinements of the HVIC product family have resulted in highly integrated MOSFET gate drivers that have exceptional dV/dt and EMC susceptibility rejection and so are well especially well suited to EPS use.

International Rectifier is dedicated to the future of Electric Power Steering and many power steering system designers are turning to IR as the leading supplier of efficient and reliable components, modules, and systems. From fully integrated motor drives to custom or standard HEXFET power MOSFETs, to high-performance gate driver ICs--IR understands Electric Power Steering Technology.

THE IR ADVANTAGE

	Rugged and reliable devices with extended safe operating temperature and avalanche energy handling yields reliable system
	Efficient operation for reduced heatsinking requirements and compact EPS controls packaging
	Efficiency yields vehicle MPG improvements

FEATURES AT A GLANCE
HEXFET^® MOSFETs

	Low RDS(on) MOSFET yields low conduction losses
	Fully Avalanche Rated
	Either 175°C or 200°C rated
	Q101 TO-220 and D2Pak
	Logic-level gate drive available with low-gate charge

High Performance MOSFET Gate Driver ICs

	Full-featured Protection
	µP compatible I/O
	Integrates many system functions in a single IC
	High dvdt rejection

Gate Driver ICs
Part Number	Package	VS	Output Current/ Sink Current	VCC Range	VBS Range	Deadtime	Features
3-Phase Drivers
IR2133	28-Lead PDIP	600V	+200ma/ -420mA	10-25V with UVLO*	10-25V with UVLO*	250ns	All inputs inverting separate high and low inputs, undervoltage lockout on all drivers, overcurrent comparator, built in latching fault logic, fault clear input, synchronized shutdown input, uncommitted "op-amp"
IR2133S	28-Lead SOIC
IR2136	28-Lead PDIP	600V	+120ma/ -250mA	10-25V with UVLO*	10-25V with UVLO*	Cannot be less than 200ns	Lower output current version of IR2133, 5V inverting input logic, programmable fault clear delay, soft turn-on driver
IR2136S	28-Lead SOIC
High Side/Low Side Driver
IR2301	8-Lead PDIP	600V	+120ma/ -250mA	5-20V with 5V UVLO*	5-20V with 5V UVLO*	No Deadtime	Non-inverting inputs 3.3V, 5V and 15V Logic Compatible
IR2301S	8-Lead SOIC
Half-Bridge Drivers
IR2302	8-Lead PDIP	600V	+120ma/ -250mA	5-20V with 5V UVLO*	5-20V with 5V UVLO*	540ns	Non-inverting inputs 3.3V, 5V and 15V Logic Compatible
IR2302S	8-Lead SOIC

*UVLO: Under-Voltage Lock-Out