In addition, IR Trench MOSFETs offers 10% lower
on-resistance temperature coefficient than
competition for 40V devices. The on-resistance
temperature coefficient advantage is particularly
important for optimal sizing of the device for
nominal operation while avoiding thermal
runaway during transients where in automotive
applications the nominal operating temperatures
usually exceed 125°C, but peak junction
temperatures may approach 175°C.
IR Trench MOSFETs also offer 4% lower gate
charge than comparable competitive Trench
devices and 40% improvement in on-resistancegate
charge figure of merit (RDS(on) x QG)
compared to planar. Low gate charge per unit
area lowers switching losses at the high
frequency (100kHz range) operation.
Other features include 7% lower thermal
resistance compared to best competitive device,
which further contributes to keeping the junction
temperature of the device lower.
IR’s automotive Trench MOSFET process provides
performance that was previously unachievable
without utilizing a more expensive package or
using much larger or parallel die. This
performance capability enables the shift from TO-
220 or D2Pak to smaller D-Pak, based on silicon
efficiency, especially when used with highperformance
thermal mounting such as insulated
metal substrates.
IR automotive Trench MOSFET technology will
rapidly be extended to the other voltages that can
be found in automotive applications with
application specific 40V, 55V, 75V and 100V
products.
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