IR3220S
Designing safe and reliable automotive motor
drive circuits up to 80W can rapidly become a
complex task involving a multitude of components
and requiring experience in power electronics,
controls and thermal design. IR3220S is a cost
effective solution that provides a rugged design
with benchmark electrical characteristics. The
resulting H-bridge circuit is easy to design and
fits within 21mm x 25mm or less than one square
inch as much as 80% smaller than a discrete
circuit.
Rated at 35V, the IR3220S integrates an H-bridge controller with two very efficient high-side
MOSFETs and two low-side MOSFET drive outputs in a single 20-pin package and cuts component
count by as much as 80%. IR3220S combines with 2 low side IRF7484 MOSFETs and as few as 4
external passive components to provide a complete, fully-operational and fullyprotected
H-Bridge controller. The IR3220S incorporates forward, reverse, braking and nonbraking for
standalone controller, yet readily interfaces with a microcontroller as a high performance
motor control peripheral.
Shoot-through, over-temperature and 30A overcurrent protection, over-voltage clamp and
under-voltage lock-out for both the high- and low-side are built-in to deliver a rugged
H-Bridge design. The innovative shoot-through operates independently on each leg of the
H-bridge, eliminating diagonal commands for robust protection with a variety of loads.
In addition, the programmable soft-start sequence limits in-rush currents. The high-side
and low-side MOSFETs use planar technology rated for repetitive avalanche energy up to Tj max.
The thermal design of the H-bridge circuit using the IR3220S is simplified with the availability
of low-side MOSFETs specifically designed to operate with the IR3220S. The IR3220S offers high
efficiency in an integrated solution with 13mΩ on-resistance for the high-side MOSFETs
and an approximate on-resistance of 7mΩ for the low side switches. The low on-resistance,
soft-start function reduce heat generated during start-up and continuous-duty operation
(6A at 85°C junction temperature), eliminating heat sink requirements. The sleep mode with
less than 10µA leakage current makes IR3220S H-bridge circuits ideal for direct battery connection.
|
 Typical H-Bridge Driver Circuit Using the IR3220S and IRF7484 HEXFET® Power MOSFETs
THE IR ADVANTAGE
|