The gate driver ICs generate the current necessary to turn MOSFETs or IGBTs on and off from the logic output of a DSP, micro-controller or other logic device. The input is typically a 3.3 -– 5.0V logic-level signal. All IR gate driver ICs are CMOS compatible, and most are TTL compatible. Output currents capability is up to 2A.

Driving a high-side MOSFET or IGBT in a half-bridge or 3-phase inverter leg offers the challenge that the gate voltage is referenced to the source rather than to ground. The source voltage is a floating point at up to the maximum bus voltage and potentially with high dV/dt. IR uses patented level shifter technology to isolate and buffer the high-side gate drive and reject dV/dt.

These ICs simplify gate drive circuit designs by integrating extensive system functionality. IR gate drive technology demonstrates low quiescent losses, making it suitable for use in automotive applications and allowing the high-side supply to be “bootstrapped” for very low cost. The IR Gate Drivers ICs family includes half-bridge, highside/ low-side, and 3-phase drivers with many fixed, programmable, and no deadtime options.

IR Gate Driver ICs enable rugged driver designs
IR Gate Driver ICs are specifically designed with motor drive applications in mind. The under-voltage lock-out available for most drivers prevents shoot-through currents and device failures during power-up and power-down without any additional circuitry. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Noise immunity is especially important to automotive applications. The IR gate drivers reject up to 50V/ns dV/dt, making them exceptionally immune to conducted and radiated noise. Additional noise immunity and tolerance to control-power ground voltage differential is obtained on some devices with seperate power and logic ground pins.

IR Gate Driver ICs enable fast switching speeds
IR Gate Drive ICs have five times better delay matching performance than gate drive opto-coupler-based solutions. Delay matching between the low-side and high-side driver is typically within ±70ns (and as low as ±10ns for some specialty products), allowing minimized dead-time control for better speed range and torque control in motor drive applications. Precise delay matching and dead-time can also allow higher switching frequency and reduced “ringing”.

Application Note AN-978: HV Floating MOS Gate Driver ICs

IR2301/02 operate from 5V supply voltage to provide safe operation during cold engine cranking

	Single High-Side Gate Drivers
	Half-Bridge Gate Drivers
	High- and Low-Side Gate Drivers
	3-Phase Inverter Gate Drivers

FEATURES AT A GLANCE

	600V gate driver in a single IC for MOSFETs and IGBTs
	Optional 5V - 20V or 10V - 20V supply voltage rating for safe operation during cold engine cranking
	Multiple Configurations: Single high-side Half-bridge 3-phase inverter driver
	Up to +2.0/-2.0A output source/link current enables driving large gate charge devices
	Integrated protection and feedback functions
	Optional programmable or fixed deadtime control
	Tolerant to negative voltage transient
	Up to 50V/ns dV/dt immunity
	Supports bootstrap operation or floating power supply
	CMOS or LSTTL input compatible

THE IR ADVANTAGE

	Dead time as low as 500ns
	Lowest cost and minimum part count gate drive implementation available
	Enable rugged gate drive design
	Compared with opto-coupler based solutions: 30% fewer parts and 50% smaller PCB 5X faster delay matching (± 70ns) No degradation of performance over time Shorter time to signal over-current (1.5µs versus 5µs)
	Temperature Range (-40/+125°C)