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New 75V HEXFET® power MOSFETs from International Rectifier offer up to 10% lower on-resistance (RDS(on)) over previous-generation devices, and offer some of the best performance on the market. The rating of these devices translates directly into lower power loss, increased efficiency and lower heat dissipation. The low-profile package enables more efficient removal of heat generated from the device, keeping device temperature down, reducing heatsink requirements and increasing reliability.
The new devices are fully characterized for repetitive avalanche, whereby the device-tolerable avalanche energy (EAR) is fully defined for a range of operating temperature, avalanche current and duty cycle conditions. This enables engineers to design in avalanche conditions with a higher level of confidence in system reliability.
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