IR improves the performance capabilities of Class D audio amplifiers by offering the integrated Half-Bridge IRFI4xxxH-117P series of Class D Audio MOSFETs.

The integrated Half-Bridge package reduces the part count by half and enables better PCB layout. In addition to lower On-Resistance, the series of integrated Half-Bridge Class D Audio MOSFETs provide optimized Gate Charge and Body-Diode Reverse Recovery to improve key Class D audio amplifier performance parameters such as efficiency, THD and EMI.

The new integrated Half-Bridge Class D Audio MOSFETs family covers the entire mid-voltage range, from 55V to 200V, for mid and high power amplifiers.

Features at a glance:
Low R_DS(on) for higher power density
Lower gate charge for higher speed

Specifications

Part Number	BVDss	Rds(on) (mOhms)	Qgtot (nC)	Package
IRFB4212PBF	100	72	15	TO-220
IRFB4019PBF	150	80	13	TO-220
IRFB4020PBF	200	80	18	TO-220
IRFB5615PBF	150	32	26	TO-220
IRFB5620PBF	200	60	25	TO-220
IRFI4024H-117P	55	48	8.9	5-pin TO-220
IRFI4212H-117P	100	72.5	15	5-pin TO-220
IRFI4019H-117P	150	80	13	5-pin TO-220
IRFI4020H-117P	200	80	19	5-pin TO-220

Conditions:
Single half-bridge configuration, with heatsink
Switching frequency = 400 kHz, Modulation Index = 90%, Vpeak factor = 10%
For more info, read AN-1070: Class D Audio Amplifier Performance Relationship to MOSFET Parameters