|
Audio Application Notes
 AN-1071: Class D Audio Amplifier Basics (New)
AN-1070: Class D Amplifier Performance Relationship to MOSFET Parameters (New)
AN-1040: System Simulation Using Power MOSFET Quasi-Dynamic Model
AN-1033: Calculating Temperature Gradients in Power MOSFETs with the "HEXRISE™" Program
AN-1031: Lead Bending and Soldering Considerations for International Rectifier's Power Semiconductor Packages
AN-1012: Mounting Considerations for International Rectifier's Power Semiconductor Packages
AN-1001: A More Realistic Characterization of Power MOSFET Output Capacitance Coss
AN-994: Maximizing the Effectiveness of Your SMD Assemblies
AN-986: ESD Testing of MOS Gated Power Transistors
AN-980: IGBTs vs. HEXFET® power MOSFETs for Variable Frequency Motor Drives
AN-976: Understanding and Using Power MOSFET Reliability Data
AN-972: Thermal and Mechanical Considerations for Full-Pak Applications
AN-965: A 500W 100kHz Resonant Converter Using HEXFET® power MOSFETs
AN-961: Using HEXSence™ Current-Sense MOSFETs in Current-Mode Control Power Supplies
AN-959: An Introduction to the HEXSence™ Current-Sensing Device
AN-957: Measuring HEXFET® Characteristics
AN-955: Protecting IGBTs and MOSFETs from ESD
AN-949: Current Ratings of Power Semiconductors
AN-947: Understanding HEXFET® Switching Performance
AN-944: Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs
AN-941: Paralleling HEXFET® power MOSFETs
AN-937: Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs
AN-936: The Do's and Don'ts of Using MOS-Gated Transistors
|