International Rectifier Introduces New Co-Pack Schottky Rectifier/Synchronous MOSFET Devices for Space-Level DC-DC Converters

EL SEGUNDO, Calif. - International Rectifier, IR® (NYSE: IRF) today introduced two innovative, space-saving devices for high-reliability (hi-rel) power management circuits in spacecraft, military, oil exploration and undersea telecommunications applications.

The new radiation-hardened (RAD-Hard™) synchronous MOSFET rectifiers combine a RAD-Hard MOSFET and high efficiency Schottky rectifier into one package (a "Co-Pack"). The new devices are designed to fill the demand for small and efficient devices in space-level power management circuits.

The trend in hi-rel digital power systems such as memory and microprocessor devices continues to demand lower operating voltages, from 3.3V to 2.5V and 1.8V. At the same time, current ratings have risen to the range of 20 to 30A or more.

Joe Coupal, Director of Marketing and Business Development for International Rectifier HiRel Products Group said, "The new hermetically sealed co-packaged Schottky rectifier/switching MOSFET devices are extremely efficient and reliable for DC-DC converter and power management circuits requiring as much as 75 amps. The new devices reduce component count, size and weight in hi-rel DC-DC power management applications."

RadHard SyncFet

Technical Highlights

In typical DC-DC converter applications, a Schottky rectifier is placed in parallel with a synchronous MOSFET (sync FET) to conduct current and avoid current shoot-through. IR's sync FET/Schottky diode Co-Pack devices shrink package count by one. Co-packaging also decreases MOSFET-to-Schottky diode wiring inductance in high frequency applications.

The new devices are packaged in the hermetically sealed surface-mount SMD-2 package, and can be ordered on a carrier to facilitate assembly integration.

Pricing and Availability

The new IRHSNA57Z60 and IRHSNA57064 are available immediately. Pricing is US $278.74 each in 500-unit quantities.

Part Number VDS VGS ID RDS(on) QG VSD
IRHSNA57Z60 30V ±20V 75A 4.0mOhms 200nC 1.05V @ 45A
IRHSNA57064 60V ±20V 75A 5.6mOhms 180nC 0.86V @ 45A
Note: Device ratings at 25°C



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