IRHNJ67C30
600V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
Active
Benefits
Increases system efficiency by 2.5%*
Reduces MOSFET power loss by 30%*
Decreases RDS(on) up to 40%
SEE Immunity to LET of 90MeV
TID Ratings of 100 and 300Krad (Si)
* Compared to previous generation devices proven performance and reliability in space applications.
Packaged on a MIL-PRF-19500 manufacturing line
Specifications
| Parameter | Value |
|---|---|
| Base Part Status | Active |
| BVDSS | 600 |
| Package | SMD-0.5 |
| RDS(on) @ 25C (pre-Irradiation) | 2.90 |
| ID @ 100C (A) | 2.2 |
| Polarity | N |
| JEDEC Part Number | 2N7598U3 |
| DLA Qualified | QPL |
| Optional Total Dose Ratings | 300 |
| Power Dissipation (W) | 75 |
| Die Size | 3 |
| ID @ 25C (A) | 3.4 |
| Circuit | Discrete |
| Total Dose | 100 |
| Generation | R6 |
| |BVDSS| | 600 |
Space
IR has a long history of providing high-reliability, radiation hardened power management solutions for space flight with products used in over 2000 space programs from launchers to satellites to space exploration vehicles.
Collateral
Rad-Hard MOSFETs and ICs Selection Guide
Loading
Base Part | Active | 600 | SMD-0.5 | 2.90 | 2.2 | N | 2N7598U3 | Discrete | 3 | QPL | R6 | 3.4 | 300 | 75 | |||
Active | 600 | TO-257AA | 3.00 | 2.1 | N | 2N7599T3 | Discrete | 3 | QPL | R6 | 3.4 | 300 | 75 | ||||
SMD-0.5
Part # 2N7598U3
600V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
| Packaging Options | Part Number | Status | Standard Pack Quantity |
|---|---|---|---|
| Standard Packaging | IRHNJ63C30SCS | ACTIVE | 1 |
| QPL Part number related to IRHLNM7S7110 | 2N7598U3 | ACTIVE | 1 |
| Standard Packaging | IRHNJ67C30SCS | ACTIVE | 1 |
| A IRHNJ67C30 with RadHard Hermetic Packaging | IRHNJ67C30 | ACTIVE | 1 |
| Similar to IRHNJ67C30 with Optional Total Dose Rating of 300 kRads. | IRHNJ63C30 | ACTIVE | 1 |