IR HiRel Products |
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.
Active
Increases system efficiency by 2.5%*
Reduces MOSFET power loss by 30%*
Decreases RDS(on) up to 40%
SEE Immunity to LET of 90MeV
TID Ratings of 100 and 300Krad (Si)
* Compared to previous generation devices proven performance and reliability in space applications.
Packaged on a MIL-PRF-19500 manufacturing line
200V, R6, N-Ch, SEE Typical Curve change
Parameter | Value |
---|---|
BVDSS | 200 |
RDS(on) @ 25C (pre-Irradiation) | 0.13 |
ID @ 100C (A) | 10 |
Package | SMD-0.5 |
Base Part Status | Active |
JEDEC Part Number | 2N7591U3 |
ESD Class | Class 2 |
ESD Voltage Range | 2,000 to 3,999 |
DLA Qualified | QPL |
Optional Total Dose Ratings | 300 |
Power Dissipation (W) | 75 |
Die Size | 3 |
ID @ 25C (A) | 16 |
Circuit | Discrete |
Total Dose | 100 |
Generation | R6 |
|BVDSS| | 200 |
Polarity | N |
IR has a long history of providing high-reliability, radiation hardened power management solutions for space flight with products used in over 2000 space programs from launchers to satellites to space exploration vehicles.
Base Part | 200 | 0.13 | 10 | SMD-0.5 | Active | 2N7591U3 | Class 2 | 2,000 to 3,999 | Discrete | 3 | QPL | R6 | 16 | 300 | N | 75 | |||
200 | 0.028 | 40 | SupIR-SMD | Active | 2N7583U2A | Class 3A | 4,000 to 7,999 | Discrete | 3 | QPL | R6 | 56 | 300 | N | 250 | ||||
200 | 0.13 | 10 | SMD-0.5 | Active | Class 2 | 2,000 to 3,999 | Discrete | 3 | R6 | 16 | 300 | N | 75 | ||||||
200 | 0.145 | 5.7 | TO-205AF | Active | Class 2 | 2,000 to 3,999 | Discrete | 3 | R6 | 9.1 | 300 | N | 25 | ||||||
200 | 0.175 | 5 | 18-pin LCC | Active | Class 2 | 2,000 to 3,999 | Discrete | 3 | R6 | 8 | 300 | N | 25 | ||||||
200 | 0.13 | 10 | TO-257AA Low Ohmic | Active | Class 2 | 2,000 to 3,999 | Discrete | 3 | R6 | 16 | 300 | N | 75 | ||||||
200 | 0.13 | 10 | TO-257AA Tabless Low Ohmic | Active | Class 2 | 2,000 to 3,999 | Discrete | 3 | R6 | 16 | 300 | N | 75 | ||||||
200 | 0.13 | 10 | TO-257AA Low Ohmic | Active | 2N7592T3 | Class 2 | 2,000 to 3,999 | Discrete | 3 | QPL | R6 | 16 | 300 | N | 75 | ||||
200 | 0.145 | 5.7 | TO-205AF | Active | Class 2 | 2,000 to 3,999 | Discrete | 3 | R6 | 9.1 | 300 | N | 25 | Yes | Hi-Rel DISCRETE |
Part # IRHNJ67230SCV
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.
Packaging Options | Part Number | Status | Standard Pack Quantity |
---|---|---|---|
IRHNJ67230A | PRELIMINARY | 1 | |
IRHNJ67230B | ACTIVE | 1 | |
A IRHNJ67230 with RadHard Hermetic Packaging | IRHNJ67230 | ACTIVE | 1 |
Screening Level TXV | IRHNJ67230SCV | ACTIVE | 1 |
JANS Equivalent of the IRHNJ67230 | JANSR2N7591U3 | ACTIVE | 1 |
Similar to IRHNJ67230 with radiation level of 300kRads | IRHNJ63230 | ACTIVE | 1 |
Standard Packaging | IRHNJ67230SCS | ACTIVE | 1 |
Screening Level Space Lead Attached | IRHNJ67230SCSA | CALL_FACTORY | 1 |
JANS Equivalent of the IRHNJ63230 | JANSF2N7591U3 | ACTIVE | 1 |
Standard Packaging | IRHNJ63230SCS | PRELIMINARY | 1 |
JANSF2N7591U3C | ACTIVE | 1 |