IR HiRel Products

IRHG567110

100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package

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Benefits

Proven performance and reliability in space applications.

Packaged on a MIL-PRF-19500 manufacturing line

PCN Alert

PCN IRHG567110, Radiation Test (TID) MOSFET

PCN IRHG567110 MOSFET

PCN IRHG567110, SEE and SOA characteristics (N only) MOSFET

Specifications

ParameterValue
BVDSS100
RDS(on) @ 25C / N-channel (Ohms)0.29
RDS(on) @ 25C / P-channel (Ohms)0.96
ID @ 25C N-Channel (A)0.29
ID @ 25C P-Channel (A)-0.96
PackageMO-036AB
Base Part StatusActive
ESD ClassClass 1A
ESD Voltage Range250-499
ID @ 100C N-Channel (A)1.0
Optional Total Dose Ratings300
Power Dissipation (W)1.4
Die Size1
CircuitQuad
GenerationR5
|BVDSS|100
ID @ 100C P-Channel (A)-0.6
Polarity2N / 2P

Space

IR has a long history of providing high-reliability, radiation hardened power management solutions for space flight with products used in over 2000 space programs from launchers to satellites to space exploration vehicles.

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MO-036AB

Part # IRHG567110SCV

100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package

Packaging OptionsPart NumberStatusStandard Pack Quantity
Screening Level TXVIRHG567110SCVCALL_FACTORY1
Similar to IRHG567110 with optional Total Dose Rating of 300kRadsIRHG563110PENDING1
Standard PackagingIRHG567110SCSACTIVE1
A IRHG567110 with RadHard Hermetic PackagingIRHG567110ACTIVE1

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