| IR HiRel Products |
IRFG5110
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
Active
Benefits
Hermetically packaged power MOSFET
Packaged on a MIL-PRF-19500 manufacturing line
Specifications
| Parameter | Value |
|---|---|
| BVDSS | 100 |
| RDS(on) @ 25C / P-channel (Ohms) | 0.7 |
| RDS(on) @ 25C / N-channel (Ohms) | 0.7 |
| Base Part Status | Active |
| Circuit | Dual |
| ID @ 100C N-Channel (A) | 0.6 |
| ID @ 100C P-Channel (A) | -0.6 |
| ID @ 25C N-Channel (A) | 1 |
| ID @ 25C P-Channel (A) | -1 |
| Package | MO-036AB |
| Polarity | 2N / 2P |
| Power Dissipation (W) | 1.4 |
| |BVDSS| | 100 |
Aerospace and Defense
IR's standard and custom power management solutions for commercial aircraft and defense applications are used in programs such as Airbus and Boeing airliners, the F16, the Eurofighter, the F35 Joint Strike Fighter and the Abrams M1A2 tank.
MO-036AB
Part # IRFG5110SCV
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
| Packaging Options | Part Number | Status | Standard Pack Quantity |
|---|---|---|---|
| Screening Level TX | IRFG5110SCX | CALL_FACTORY | 1 |
| Screening Level TXV | IRFG5110SCV | CALL_FACTORY | 1 |
| A IRFG5110 with Hermetic Packaging | IRFG5110 | ACTIVE | 1 |