IRF7580M

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

Benefits

RoHS Compliant

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Specifications

ParameterValue
Part StatusActive and Preferred
PackageDirectFET ME
VBRDSS (V)60
VGs Max (V)20
CircuitDiscrete
RDS(on) Max 10V (mOhms)3.6
Qg Typ (nC)120.0
ID @ TC = 25C (A)116
Power Dissipation @ TC = 25C (W)115
Rth(JC) (K/W)1.3
Qual LevelIndustrial
MSL3
Package ClassSurface Mount Can - DirectFET
BasePartActive
1k Budgetary Pricing0.88
Qgd Typ (nC)36.0
TJ Max175
Environment OptionsPbF
ID @ TC = 100C (A)82
DirectFET ME

Part # IRF7580MTRPBF

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

$0.881K Budgetary Pricing (USD):
Packaging OptionsPart NumberStatusStandard Pack Quantity
Tape and ReelIRF7580MTRPBFACTIVE4800

Package Support