IRF7580M

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

Active and Preferred

Benefits

RoHS Compliant

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Specifications

ParameterValue
Base Part StatusActive_and_Preferred
VBRDSS (V)60
PackageDirectFET ME
RDS(on) Max 10V (mOhms)3.6
ID @ TC = 25C (A)116
Package ClassSurface Mount Can - DirectFET
VGs Max (V)20
Qg Typ (nC)120.0
Power Dissipation @ TC = 25C (W)115
Qual LevelIndustrial
CircuitDiscrete
Rth(JC) (K/W)1.3
MSL3
RoHSNo
Halogen-FreeNo
1k Budgetary Pricing0.88
Qgd Typ (nC)36.0
TJ Max175
Environment OptionsPbF
ID @ TC = 100C (A)82
TechnologyTrench Mosfet
DirectFET ME

Part # IRF7580MTRPBF

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

$0.881K Budgetary Pricing (USD):
Packaging OptionsPart NumberStatusStandard Pack Quantity
Tape and ReelIRF7580MTRPBFACTIVE_AND_PREFERRED4800

Package Support