IRF7580M

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

Preliminary

Benefits

RoHS Compliant

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Specifications

ParameterValue
VBRDSS (V)60
RDS(on) Max 10V (mOhms)3.6
CircuitDiscrete
ID @ TC = 100C (A)82
ID @ TC = 25C (A)116
MSL3
PackageDirectFET ME
Part StatusActive and Preferred
Power Dissipation @ TC = 25C (W)115
Qg Typ (nC)120.0
Qgd Typ (nC)36.0
Qual LevelIndustrial
Rth(JC) (K/W)1.3
TJ Max175
VGs Max (V)20
Environment OptionsPbF
Package Class CanSurface Mount Can - DirectFET
DirectFET ME

Part # IRF7580MTRPBF

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

$0.741K Budgetary Pricing (USD):
Packaging OptionsPart NumberStatusStandard Pack Quantity
Tape and ReelIRF7580MTRPBFPRELIMINARY4800

Package Support