IRF7580M

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

Active and Preferred

Benefits

RoHS Compliant

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Specifications

ParameterValue
Base Part StatusActive and Preferred
VBRDSS (V)60
PackageDirectFET ME
RDS(on) Max 10V (mOhms)3.6
ID @ TC = 25C (A)116
Package ClassSurface Mount Can - DirectFET
VGs Max (V)20
Qg Typ (nC)120.0
Power Dissipation @ TC = 25C (W)115
Qual LevelIndustrial
CircuitDiscrete
Rth(JC) (K/W)1.3
MSL3
RoHSNo
Halogen-FreeNo
1k Budgetary Pricing0.88
Qgd Typ (nC)36.0
TJ Max175
Environment OptionsPbF
ID @ TC = 100C (A)82
TechnologyTrench Mosfet
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Drag and drop parameters to add, remove, and reorder.

  • ID @ TC = 100C (A)
  • Qgd Typ (nC)
  • TJ Max
  • 1k Budgetary Pricing
  • Halogen-Free
  • Technology
  • Part
  • Base Part Status
  • VBRDSS (V)
  • Package
  • RDS(on) Max 10V (mOhms)
  • ID @ TC = 25C (A)
  • Package Class
  • VGs Max (V)
  • Qg Typ (nC)
  • Power Dissipation @ TC = 25C (W)
  • Qual Level
  • Circuit
  • Rth(JC) (K/W)
  • MSL
Part
Base Part Status
Package
Package Class
Qual Level
Circuit
MSL
3
1
Base
Part
Active and Preferred
60
DirectFET ME
3.6
116
Surface Mount Can - DirectFET
20
120.0
115
Industrial
Discrete
1.3
3
Active and Preferred
60
DirectFET ME
2.9
130
Surface Mount without Leads
20
133
96
Industrial
Discrete
1.3
1
DirectFET ME

Part # IRF7580MTRPBF

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package

$0.881K Budgetary Pricing (USD):
Packaging OptionsPart NumberStatusStandard Pack Quantity
Tape and ReelIRF7580MTRPBFACTIVE_AND_PREFERRED4800

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