INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

The History of International Rectifier

An IR Time Line

August 1947
Operations begin in Los Angeles

November 1954
Germanium rectifiers introduced

August 1957
International Rectifier Corp., Japan Ltd. founded

June 1958
Solar cells and zener diodes introduced

September 1958
IR offers shares of stock for public trading

December 1958
IR, Great Britain Ltd. founded

September 1959
First silicon controlled rectifier (SCR) introduced

May 1960
IR introduces world's first solar car

December 1960
IR stock listed as "IRF" on both coasts

June 1961
Operations begin at IR, Italy

October 1965
Operations begin at IR, India

October 1966
Operations begin at IR, Canada

March 1973
Operations begin at IR, Mexico

February 1974
IR introduces bipolar and Darlington transistors

June 1979
IR introduces the HEXFET® power MOSFET

August 1983
Introduction of the ChipSwitch® power IC

September 1983
IR issues patent for broad protection of its power MOSFET and IGBT products

November 1985
IR Far East sales office opens

April 1987
Production begins at HEXFET America

September 1987
Introduction of industry's first high voltage power IC

September 1987
IR Crydom Division sold to Silicon Power Cube

July 1988
IR South East Asia sales office opens in Singapore

December 1988
600V IGBTs introduced

April 1990
Federal Court upholds IR's MOSFET patents

April 1993
IR introduces IR6000 high side power switch

May 1993
IR introduces 900V IGBTs

July 1993
IR introduces IRSF3010, its first SmartFET

August 1993
IR introduces Full-Pak TO-220 2.5kV MOSFET
IR Introduces 600V Standard Modules

November 1993
IR Introduces SOT-223 SMT package

December 1993
IR Introduces UltraFast 500V IGBTs

February 1994
IR Introduces 600V FET Driver for Ballast
IR Introduces 600V Half-Bridge MOSFET/IGBT Gate Driver

March 1994
IR Introduces Low Charge MOSFET Series

May 1994
IR Introduces IGBT/HEXFRED Die SMT Package

June 1994
IR Introduces 50V Smart FET Single-Chip Transistor

November 1994
IR Introduces PVT 412 Microelectronic Photovoltaic Relays

January 1995
IR Introduces Advanced SO-8 Benchmark MOSFETs

February 1995
IR Introduces Micro8 and Micro3 MOSFET Packages

April 1995
IR Introduces PVU414 Microelectronic Photovoltaic Relays
IR Introduces Low Cost 600V Control ICs

June 1995
IR Introduces Low Contact Resistance Microelectronic Photovoltaic Relays
IR Expands Schottky Diode SMT Offering

August 1995
IR Introduces Plastic Input 800-1600V Rectifier Diodes

October 1995
IR Introduces 60V Load Current Photovoltaic Relay

December 1995
IR Introduces Four-Mask MOSFET Manufacturing Process

January 1996
IR Introduces Gen 5 IRF7413 N-Channel MOSFETs

May 1996
IR Announces Dual-Pole, 400V Solid-State Relays

IR Launches New FETKY Technology
for High Density Power Converters

June 1996
Ford Motor Company Promotes IR
to Preferred Supplier Status for Power MOS Transistors

IR Introduces the New PVT312 Series Telecom Interface Relay

August 1996
IR Adopts Shareholder Rights Plan

IR Launches "IR+" Interactive Product Selection Tool to Web Site

IR Wins QS-9000 Certification for Automotive Quality

September 1996
IR Launches PowIRtrain -
Complete Power Subsystems for AC Motor Control

IR Launches New Generation of IGBTs

IR Announces the New PVI5013R Series Photovoltaic Isolators

November 1996
IR Develops New Generation of Thyristors in Plastic Packages

December 1996
IR Expands Line of State-of-the-Art IGBTs

January 1997
IR's New Miniature 6-pin Package Targets the Portable Electronics Market

IR's 1200V IR2233 Sets a New Standard for Motor Drive Inverters

IR Offers the New Super Magn-A-Pak (SMAP) Module

IR Launches Line of Low Charge HEXFET® Power MOSFETs

March 1997
IR Introduces the PowIRsafe Series of
Safety-Conscious, High-Side and Low-Side Switches

May 1997
IR Announces the PVT322 Series - A New Telecom MER

Moat Process Yields Standard Recovery Diodes
in Plastic SMT Packages for The First Time

IR and SGS-Thomson Settle Patent Infringement Litigation

June 1997
IR's Award-Winning Video, "The World in A Grain of Sand," Airs on PBS

July 1997
IR Offers Its First Collection of Data Sheets on CD-ROM, "Power Conversion Semiconductors and Plug & Play Solutions"

IR's New WARP Speed IGBTs Break Speed Barrier; Replace Large MOSFETs in Many Switching Power Supply Applications

IR Provides Key Power Conversion Components for Mars "Pathfinder"

August 1997
IR Announces the SOT-227 -
The Cost-Effective, Universal Solution to Power Applications

IR Introduces the Micro8 FETKY

IR Celebrates Its 50th Anniversary

September 1997
IR Achieves QS9000 Status

IR Offers Thin Surface-Mount Packages for MERs

November 1997
IR's QIRL Program Provides Standardized Rad-Hard Components for Space Applications

IR Launches SafeIR, QuietIR and SmallIR Families of Input Rectifiers

IR's Super 247 Package
Gives SMPS, UPS, Motor Drive, and Welding System Designers
100% More Silicon in An Industry-Standard Package Outline

December 1997
IR's New 20V Schottky Is A Breakthrough
for 3.3V Power Supply Designers

The IR SMD-10 Package Offers 5 to 50kW SMPS, Motor Drive and
Welder Designers Cost-Effective Alternative to Large IGBT Modules

January 1998
IR SO-8 FETKY™ devices provide maximum system efficiency
at a minimum cost for high-density converter designs.

February 1998
IR's PVX6012 makes positive environmental impact
by replacing reed relays that use toxic mercury.

April 1998
IR Mega-RAD™ Radiation Hardened MOSFETs set new performance
standards by offering the industry's lowest on-resistance, gate charge and
switching times for space-based power conversion systems.

May 1998
IR's PowIRtab™ package combines low profile,
excellent die-to-footprint ratio and sturdy connectivity
for diodes in high-current environments.

June 1998
IRF7805 ans IRF7807 Chip Set achieves new standard for efficiency
in DC/DC converters for mobile Pentium™ II processors.

July 1998
IR's 900V WARP Speed™ IGBT line is the first in its class
to allow switching frequencies up to 100kHz - triple the norm.

October 1998
IR breaks ground for its new 88,000 sq. ft. production facility
in the Penllergaer Business Park in Swansea Wales.

IRF7210 small outline power MOSFET sets industry on-resistance
benchmark with an on-resisitance of only 7 millohms.

December 1998
IR introduces its Mini Series of Intelligent Power Switches designed
with the most extensive array of protection features in some of the smallest packages available.

January 1999
IR introduces its Maxi Series of Intelligent Power Switches designed to handle high current loads safely with low power dissipation.

April 1999
IR Develops CoolMOS™-equivalent Technology

IR Sets the Benchmark for P-Channel MOSFET Performance

July 1999
New IR "Benchmark" Series of HEXFET® power MOSFETs for Offline SMPS Has Industry's Lowest RDS(on) at 600V

August 1999
IR's New Synchronous FETKY™ with Reduced Footprint for Higher Power Density Sets Efficiency Standard for DC-DC Converters

September 1999
New SOIC HEXFET® power MOSFETs Set Industry Standard for Lowest RDS(on)

January 2000
IR Acquires Zing Technologies and its Wholly-owned Subsidiary Omnirel

January 2000
IR Optimimizes HEXFET® power MOSFETs for Isolated DC-DC Converters

March 2000
IR2159 Lighting Ballast IC Named Finalist for 1999 EDN Innovation of the Year Award

International Rectifier Puchases Zing Technologies, Inc. and its Wholly-owned Subsidiary, Omnirel

International Rectifier Introduces the Industry's First Synchronous Rectification Control IC

April 2000
International Rectifier Introduces Line of Temperature-sensing MOSFETs for Automotive System Protection

May 2000
IR Completes Second Phase of Its DC-DC for Power Semiconductor Benchmark System Efficiencies

IR Introduces the FlipFET® power MOSFET with a 100% Silicon to Die Footprint Ratio

June 2000
International Rectifier Introduces ZVS-specific, High-voltage HEXFET® Power MOSFETs for AC-DC SMPS Applications

July 2000
International Rectifier Named Second Fastest-growing Semiconductor Firm by Los Angeles Business Journal

September 2000
International Rectifier Introduces Introduces the World's First 1000-volt Radiation Hardened MOSFET

International Rectifier Advanced Planar Stripe HEXFET® power MOSFETs Maximize Automotive Performance

October 2000
International Rectifier Introduces Industry's First Plastic-packaged 200°C power MOSFET

International Rectifier Expands Proprietary Business with Acquisitions of Lambda Advanced Analog and Magnitude 3

November 2000
International Rectifier Announces Motor Drive Design Breakthrough with Introduction of its Accelerator™ Architecture

International Rectifier Introduces the Lowest On-resistance, Rad-HARD™ P-Channel MOSFETs

December 2000
International Rectifier Expands Analog Business with Acquisition of Unisem and its Full Line of DC-DC Power Management ICs

January 2001
International Rectifier First to Secure Federal Approval to Export Power Semiconductors for Satellites

International Rectifier Announces Breakthrough in Power-Saving Fluorescent Lighting Technology

February 2001
International Rectifier Introduces iPOWIR™ Power Management Technology

March 2001
International Rectifier Introduces the World's First 1000-Volt Radiation Hardened MOSFET

September 2001
International Rectifier Launches Chinese Language Web Site

January 2002
International Rectifier Italy Wins Investment and Commerce Development Award

International Rectifier and Mitsubushi Electric Engineering Company Ltd. Sign Development Agreement for Space-Level Power Systems

International Rectifier Introduces the DirectFET®, the Industry's First Dual-Side Cooling Power Package

February 2002
Valeo Establishes Alliance with International Rectifier to Further Enhance Its Electronics Capability

March 2002
International Rectifier Acquires Submicron Wafer Fab to Support Growth in Proprietary Products

International Rectifier Acquires "High Reliability" Product Line from Fairchild Semiconductor

April 2002
Philips Sells TechnoFusion (a leading maker of power generation systems for automotive electronics) to International Rectifier

International Rectifier Introduces DirectFET® Packaging - A Power Management Breakthrough for Next Generation Electronics

International Rectifier Introduces the Industry's First Q101-Qualified, SO-8 Dual MOSFETs rated at 175°C for Automotive Power Systems

May 2002
International Rectifier Introduces the iNTERO™ Family of Intelligent Power Modules for Motor Drives

July 2002
International Rectifier DirectFET® MOSFETs Set Industry Standard for Intel Itanium 2 Processor Power

September 2002
International Rectifier Introduces myPOWER Online Design Center to Save Time in Designing Advanced Power Systems

October 2002
International Rectifier Introduces Industry-Best 500V MOSFETs for Zero-Voltage Switching Power Supplies

November 2002
International Rectifier Announces Technology Breakthrough in Power Electronics Systems for Automotive Alternators

December 2002
International Rectifier Introduces 30V Power MOSFETs with Industry's Lowest On-Resistance in the Standard D-Pak Outline

January 2003
International Rectifier Named Winner of Electronic Products Magazine's 27th Annual Product of the Year Award

International Rectifier Introduces XPhase™ Scalable Multi-Phase Architecture for Interleaved Buck DC-DC Converters

February 2003
International Rectifier Announces Development System To Expedite Motor Control Design Using IR's Accelerator™ Design Platform

March 2003
International Rectifier Named Finalist in Two Categories for EDN Magazine's 2002 Innovation of the Year Award Competition

May 2003
International Rectifier Introduces Motor Control Development System and Control Algorithm Intellectual Property Library to Slash High Performance Motor Control System Design Time

June 2003
International Rectifier Launches Die Sales Business Giving Customers a Competitive Edge

July 2003
International Rectifier and SANYO Form Joint Venture

August 2003
International Rectifier Introduces Industry-First, One Amp Ultra Compact Low Dropout Regulator for Noise-Sensitive Circuitry

International Rectifier Introduces the Industry's Smallest 1A, 40V Surface-Mount Schottky Diode on the Market

September 2003
International Rectifier DirectFET® MOSFETs Win Prestigious 'R&D 100 Award'

International Rectifier DirectFET® Power MOSFET Wins Prestigious Award in China

International Rectifier Breaks Ground On New Site in Xi'an China

October 2003
International Rectifier Breaks Ground On New Site in Xi'an China

November 2003
International Rectifier Introduces Two Revolutionary Digital Motor Control ICs That Eliminate Programming Tasks

International Rectifier Rings Closing Bell at NYSE

International Rectifier Takes Next Steps In Conversion to Lead-Free Packages

January 2004
International Rectifier Announces Settlement with Hitachi/Renesas and Patent Cross-License Agreement

February 2004
International Rectifier Introduces Industry's First Dual Output, Two-Phase DC-DC Power Blocks

International Rectifier Opens HiRel Power Management Research and Design Center In Denmark

March 2004
International Rectifier Opens IC Design Center in North Carolina

International Rectifier's XPhase™ Chip Set Wins EDN Innovation of the Year Award

April 2004
International Rectifier's Two Wales Facilities Achieve ISO 14001 Certification

May 2004
International Rectifier Introduces the DirectFETKY™ Integrated MOSFET/Schottky Diode and DirectFET® MOSFET Chip Set

International Rectifier Expands Workforce and Investment at Facility in Wales

June 2004
International Rectifier's Massachusetts Facility Earns ISO 14001 Certification

International Rectifier Wins Best Design Award from Prestigious Electronics Publication in China

International Rectifier to Acquire ATMI’s Epitaxial Services Operation

August 2004
International Rectifier Named One of The Fastest Growing Technology Companies in Deloitte's Los Angeles Technology Fast 50 Program

September 2004
International Rectifier's Alex Lidow and Tom Herman Inducted Into Engineering Hall of Fame

International Rectifier's Chairman Eric Lidow Honored for Lifetime Contribution to Industry

International Rectifier iPOWIR™ Integrated Power Building Block Wins Prestigious Award in China

October 2004
International Rectifier Lighting Control ICs Ranked Among Top 10 Ultimate Products by CMP Media's EE Times and eeProductCenter

International Rectifier's Newport Wales Facility Receives National Award for Energy Efficiency

International Rectifier Achieves ISO 14001 Certification at Its Mumbai and Borgaro Facilities

November 2004
International Rectifier's Newport Wales Facility Earns Energy Efficiency Award

International Rectifier is Finalist in Global Energy Awards

January 2005
International Rectifier Ranked Among Forbes' Best Managed Companies

International Rectifier IR2161 Lighting Control IC Wins Electronic Products Magazine's Product of the Year Award

International Rectifier Compact Fluorescent Lamp Control Chip Listed Among EDN Magazine's "Hot 100" Products of 2004

February 2005
International Rectifier Introduces New XPhase™ Control IC for AMD Opteron™ and Athlon 64™ Applications

March 2005
International Rectifier Introduces µPFC™ IC that Simplifies High Density Designs from 75W to 4kW

International Rectifier Introduces Sub-Ohm On-Resistance Microelectronic Relay to Enhance Automated Test System Reliability and Performance

April 2005
International Rectifier Introduces Radiation-Hardened Solid State Relays that Replace Electro-Mechanical Relays in High Reliability Systems

International Rectifier Introduces Universal Active ORing Controller IC for Efficient Zero-Failure Power Systems

May 2005
International Rectifier Introduces Simulation Software for iMOTION™ Integrated Power Modules

International Rectifier Opens Customer Service Center in Shenzhen, China

International Rectifier's iMOTION Energy-Saving Power Modules Win Award from Electronics Design and Application World Magazine in China

July 2005
International Rectifier Introduces Universal Design Kit and Online PFC Design Tool for Faster PFC Designs with the IR1150 µPFC Control IC

October 2005
International Rectifier Wins Elektra 05 European Electronics Industry Environmental Award

International Rectifier Opens New Manufacturing Facility in Xi'an, China

International Rectifier XPhase Scalable Multiphase Control IC for High Performance Processors Wins Prestigious Award from Electronic Products Magazine, China

November 2005
International Rectifier Introduces Proprietary Plastic Packaged Motor Inverter Modules that Deliver High Reliability in Airborne Motor Control Systems

December 2005
International Rectifier Wins California’s Flex Your Power Energy Efficiency Award

January 2006
International Rectifier’s Mexico Facility Earns MIL-PRF-19500 JANTX/TXV Assembly Certification

February 2006
IR’s New XPhase Control IC Increases Multi-Phase Converter Efficiency by Three Percent in a Smaller Footprint

March 2006
IR’s New SmartRectifier™ IC Slashes Parts Count by 75 Percent, Reduces MOSFET Temperature by 10 Degrees with 1% Increase in System Efficiency

IR’s High Performance iMOTION™ Platform Enables 95 Percent Efficiency in Air Conditioning Applications

April 2006
IR Trench IGBTs Reduce Power Dissipation Up to 60% in Motor Control Applications

International Rectifier Exploring Potential Sale of All Non-Focus Products Business

May 2006
IR’s Integrated Design Platform Delivers Sensorless Control For Energy-Saving Motors Used in Washers June 2006
IR Expands myPOWER Online Design with POWIR+ Chipset Reference Designs and Web Tools

July 2006
IR Introduces 30V-DirectFET MOSFET Chipset for DC-DC Buck Converters Reducing Footprint up to 50%

August 2006
International Rectifier’s Compact, Robust High-Voltage ICs Simplify HID Ballast Circuits and Extend Lamp Life

Septmeber 2006
International Rectifier Point-of-Load Chipset Earns Industry Award in China

International Rectifier Introduces 20V Microelectronic Power IC Photovoltaic Relays with 50 Percent Lower On-State Resistance

October 2006
International Rectifier Introduces High-Voltage Buck Control ICs for Constant LED Current Regulation

IR’s New HiRel iMOTION™ Motor Drive Module Eliminates Software Development in High Performance Motors

IR’s New Mid-Power SmartRectifier™ IC Boosts Overall System Efficiency One Percent Using 75 Percent Fewer Components

November 2006
International Rectifier and Vishay Announce Agreement for the Sale of IR's Power Control Systems Business

IR’s New Protected 600V Lighting IC with PFC Extends Flexibility and Programmability of Advanced Ballast Designs

IR’s Sensorless Motor Control Platform For Variable-Speed Pumps Enables 50 Percent Reduction in Energy Consumption

International Rectifier's Founder Eric Lidow Receives Lifetime Achievement Award

December 2006
International Rectifier’s New Class D Audio Chipset Cuts Part Count and Board Size By 50%

January 2007
International Rectifier and Vishay Intertechnology, Inc. Announce HSR Clearance for Sale of IR's Power Control Systems Business to Vishay

Two International Rectifier iMOTION Innovations Win analogZONE Product of the Year Awards

February 2007
International Rectifier Named as Finalist in Three EDN Innovation Award Categories

IR’s New Versatile PWM Control IC Addresses Synchronous Buck Applications with Wide Input Voltage Range from 12V to 75V and Boosts Efficiency

March 2007
International Rectifier’s SmartRectifier IC Wins 2006 Editor’s Choice Award in China

April 2007
International Rectifier Completes Sale of Power Control Systems Business to Vishay

International Rectifier's SmartRectifier IC Wins EDN Innovation of the Year Award

ACE Awards Honor International Rectifier's Chairman for Lifetime Achievement

International Rectifier Announces Internal Investigation of Accounting Irregularities at Foreign Subsidiary and Cautions on Reliance on Prior Financial Statements

May 2007
International Rectifier's Lighting HVIC Wins Best Power Control Product Award from Leading Publication in China

IR’s Latest XPhase® Chipset Reduces External Part Count by 25 Percent and Shrinks Powertrain Footprint by 45 Percent

June 2007
International Rectifier Introduces New High Performance Two-Channel 120W Class D Audio Amp Reference Design

July 2007
International Rectifier Announces Management Changes

and more to come...

Worldwide Manufacturing

International Rectifier Corporation was founded August 9, 1947 by the late Leon Lidow and his son, Eric. Starting with just six employees in an unincorporated area of Los Angeles, IR has grown to nearly 4,000 employees with manufacturing locations and sales offices around the world.

Power MOS Leader

International Rectifier revolutionized the transistor market with the introduction of its HEXFET® power MOSFETs in 1979. Today, power MOS devices account for nearly three-quarters of IR's revenues. Silicon rectifiers and Schottky diodes account for the remainder. But while profit margins for rectifiers and diodes have been good, the average selling prices (ASP) for MOSFETs are declining. To combat this trend, HEXFETAmerica, IR's 285,000 sq.ft. HEXFET manufacturing facility located in Temecula, California is producing a lower-cost power MOSFET. Since its opening in April,1987, HEXFETAmerica has broken all records and has exceeded expectations for high-volume ramp-up production of HEXFET power MOSFETs.

Patent Protection

IR has made significant investments in developing and protecting its intellectual property. Through successful enforcement of its broad-based power MOSFET patents, the Company has generated royalty income, received substantial payments in settlement of litigation, and entered into a number of license agreements. The Company is committed to enforcing its rights under those patents and intends to pursue additional license agreements. IR believes that its proprietary technology and intellectual property contribute to a competitive advantage.

Power ICs

IR has also achieved important successes in the area of power integrated circuits (PICs). Since the introduction of the ChipSwitch® in 1983, IR has invested in the research and development of more revolutionary products in this growing market. International Rectifier's line of power ICs now includes MOS gate drivers (MGD) and intelligent power switches (IPS).

Military Milestones

International Rectifier's Government and Space Products Group introduced the industry's first radiation-hardened (Rad Hard) power MOSFETs in January of 1987. Rad Hard MOSFETs represent an important and growing market as they allow military systems designers to shield their hardware without using expensive and heavy shielding material. Other milestones included a major streamlining of military production lines for maximum efficiency and improved delivery of JAN qualified devices. International Rectifier now has the largest number of qualified power semiconductors in the US and is the industry leader in supplying hi-rel devices to the Government and Space market.

 
Search
Submit
Part Search
Site Search
Applications
AC-DC
Appliances
Automotive 
DC-DC
Lighting
NetCom
A&D/HiRel
Audio
Desktop/Server
Enterprise Power
Motor Control
Portables
Company Information Home
About IR
Contact Us
Press Room
Careers
Environmental
Site Index
Investor Relations/Info
International Sites: | Chinese 简体中文 | Korean 한국어 | Japanese 日本語 |   About International Rectifier | Contact Us | Privacy   
©1995-2008 International Rectifier